A. Greene

Yield Learning Methodologies and Failure Isolation in Ring Oscillator Circuit for CMOS Technology Research

K. Cheng, Victor Chan, T. M. Levin, 2019, IEEE Transactions on Semiconductor Manufacturing.

Failure Isolation in Ring Oscillator Circuit and Defect Detection in CMOS Technology Research

K. Cheng, J. Strane, T. Levin, 2019, 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

P. D. Kirsch, K. Matthews, D.-H Kim, 2013, 2013 IEEE International Electron Devices Meeting.

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

C. Park, N. Loubet, B. Haran, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).