B. Ebersberger

Nanoscale observations of the electrical conduction of ultrathin SiO/sub 2/ films with conducting atomic force microscopy

Marc Porti, Alexander Olbrich, Xavier Aymerich, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

Qualification of SnAg solder bumps for lead-free flip chip applications

B. Ebersberger, B. Ebersberger, R. Bauer, 2004, 2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546).

Nanoscale electrical characterization of thin oxides with conducting atomic force microscopy

C. Boit, B. Ebersberger, A. Olbrich, 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

Marc Porti, Alexander Olbrich, Xavier Aymerich, 2002 .

Cu pillar bumps as a lead-free drop-in replacement for solder-bumped, flip-chip interconnects

B. Ebersberger, B. Ebersberger, C. Lee, 2008, 2008 58th Electronic Components and Technology Conference.

Reliability of lead-free SnAg solder bumps: influence of electromigration and temperature

B. Ebersberger, B. Ebersberger, R. Bauer, 2005, Proceedings Electronic Components and Technology, 2005. ECTC '05..

Application of SCM for the microcharacterization of semiconductor devices

C. Boit, B. Ebersberger, G. Zimmermann, 2003 .

High aspect ratio all diamond tips formed by focused ion beam for conducting atomic force microscopy

Christian Boit, Alexander Olbrich, B. Ebersberger, 1999 .

Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy

Marc Porti, Alexander Olbrich, Xavier Aymerich, 2001 .

Thickness mapping of thin dielectrics with emission microscopy and conductive atomic force microscopy for assessment of dielectrics reliability

Christian Boit, B. Ebersberger, B. Ebersberger, 1996, Proceedings of International Reliability Physics Symposium.

Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy

Marc Porti, Alexander Olbrich, Xavier Aymerich, 2001 .