F. M. Lee

A novel conducting bridge resistive memory using a semiconducting dynamic E-field moderating layer

F. M. Lee, Y. Y. Lin, W. C. Chien, 2013, 2013 Symposium on VLSI Technology.

Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation

F. M. Lee, Y. Y. Lin, D. Y. Lee, 2017, IEEE Electron Device Letters.

A simple new write scheme for low latency operation of phase change memory

F. M. Lee, Y. Y. Lin, H. L. Lung, 2012, 2012 Symposium on VLSI Technology (VLSIT).

A novel cross point one-resistor (0T1R) conductive bridge random access memory (CBRAM) with ultra low set/reset operation current

F. M. Lee, Y. Y. Lin, W. C. Chien, 2012, 2012 Symposium on VLSI Technology (VLSIT).

High Performance Conducting Bridge Resistive Memory Featuring a Novel Reliable Structure (Invited)

F. M. Lee, 2013 .

An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

F. M. Lee, M. BrightSky, Y. Zhu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).