Stephan Figge

发表

Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures

Mathias Schubert, Sven Einfeldt, Detlef Hommel, 2001, SPIE Optics + Photonics.

In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers

Sven Einfeldt, Detlef Hommel, Stephan Figge, 2000 .

Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots

Detlef Hommel, Andreas Rosenauer, M. Seyfried, 2011 .

GaN based laser diodes – epitaxial growth and device fabrication

Marc Ilegems, Sven Einfeldt, Detlef Hommel, 2003 .

The role of high-temperature island coalescence in the development of stresses in GaN films

James S. Speck, Sven Einfeldt, Detlef Hommel, 2001 .

Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

Detlef Hommel, Ewa M. Goldys, R. Bozek, 2004 .

Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy

Sven Einfeldt, Detlef Hommel, Stephan Figge, 1999 .

Temperature dependence of the thermal expansion of GaN

Sven Einfeldt, Detlef Hommel, Stephan Figge, 2005 .

Temperature dependence of the thermal expansion of AIN

Detlef Hommel, Boris M. Epelbaum, Stephan Figge, 2009 .

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Detlef Hommel, Plamen Paskov, Tanya Paskova, 2005 .

Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers

James S. Speck, Shuji Nakamura, Detlef Hommel, 2006 .

Temperature dependence of the thermal expansion of AlN

Detlef Hommel, Boris M. Epelbaum, Stephan Figge, 2009 .

Optoelectronic devices on bulk GaN

Detlef Hommel, Tanja Paskova, Bo Monemar, 2005 .

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Detlef Hommel, Edward A. Preble, M. Tutor, 2006 .

Coupling of optical modes in GaN‐based laser‐diodes

Sven Einfeldt, Detlef Hommel, Stephan Figge, 2003 .

Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg

Sven Einfeldt, Detlef Hommel, Peter Michler, 2001 .

Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire

Silke Christiansen, Martin Heilmann, Erdmann Spiecker, 2014 .