A. Kerber

Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies

A. Kerber, 2015, 2015 IEEE International Reliability Physics Symposium.

Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies

A. Kerber, E. Maciejewski, C.-H. Lin, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies

A. Kerber, 2016, Microelectron. Reliab..

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

A. Kerber, M. Kerber, T. Pompl, 2006, Microelectron. Reliab..

NBTI in Si0.5Ge0.5 RMG gate stacks — Effect of high-k nitridation

A. Kerber, P. Srinivasan, J. Fronheiser, 2015, 2015 IEEE International Reliability Physics Symposium.

Reliability screening of high-k dielectrics based on voltage ramp stress

Anabela Veloso, Guido Groeseneken, Luigi Pantisano, 2007, Microelectron. Reliab..

Ambient temperature and layout impact on self-heating characterization in FinFET devices

A. Kerber, Durga Misra, D. Singh, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).