Debdeep Jena

发表

Realization of the First GaN Based Tunnel Field-Effect Transistor

Huili Grace Xing, Alexander Chaney, Henryk Turski, 2018, 2018 76th Device Research Conference (DRC).

Infrared reflectivity spectroscopy of optical phonons in short-period AlGaN/GaN superlattices

James L. Merz, Yu Cao, Debdeep Jena, 2007, SPIE NanoScience + Engineering.

Tunneling Transistors Based on Graphene and 2-D Crystals

Debdeep Jena, D. Jena, 2013, Proceedings of the IEEE.

Energy-Efficient Clocking Based on Resonant Switching for Low-Power Computation

Debdeep Jena, Gregory L. Snider, Raj K. Jana, 2014, IEEE Transactions on Circuits and Systems I: Regular Papers.

Graphene for Reconfigurable Terahertz Optoelectronics

Lei Liu, Huili Grace Xing, Berardi Sensale Rodriguez, 2013, Proceedings of the IEEE.

Preface: phys. stat. sol. (c) 5/6

Yasuhiko Arakawa, Umesh K. Mishra, Tomas Palacios, 2008 .

Demonstration of AlGaN-delta-GaN QW by plasma-assisted molecular beam epitaxy for 260-nm ultraviolet light emitting diodes

Debdeep Jena, Jing Zhang, Cheng Liu, 2018, OPTO.

Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping

Debdeep Jena, Vladimir Protasenko, Huili Xing, 2014, Photonics West - Optoelectronic Materials and Devices.

New physics in GaN resonant tunneling diodes

Huili Grace Xing, Debdeep Jena, Jimy Encomendero, 2019, OPTO.

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2018, 2018 76th Device Research Conference (DRC).

Gallium nitride electronics

Debdeep Jena, Siddharth Rajan, D. Jena, 2013 .

Degradation of GaN-on-GaN vertical diodes submitted to high current stress

Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, 2018, Microelectron. Reliab..

75 Years of the Device Research Conference—A History Worth Repeating

Deji Akinwande, Debdeep Jena, Aaron D. Franklin, 2018, IEEE Journal of the Electron Devices Society.

In quest of the next information processing substrate

Eric Pop, H.-S. Philip Wong, Michael T. Niemier, 2017, 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC).

Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor

Xiaodong Mu, Jacob B. Khurgin, Yu Cao, 2008, SPIE OPTO.

GaN tunnel switch diodes

Huili Grace Xing, Alexander Chaney, Debdeep Jena, 2016, 2016 74th Annual Device Research Conference (DRC).

Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

Huili Grace Xing, Jing Zhang, Cheng Liu, 2017, OPTO.

New generation transistor technologies enabled by 2D crystals

Debdeep Jena, D. Jena, 2013, Defense, Security, and Sensing.

THz devices based on 2D electron systems

Huili Grace Xing, Debdeep Jena, Bo Song, 2015, Defense + Security Symposium.

Graphene nanoribbon FETs for digital electronics: experiment and modeling

Huili Grace Xing, Debdeep Jena, Kristof Tahy, 2013, Int. J. Circuit Theory Appl..

(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects

Mingda Li, Huili Grace Xing, Luca Selmi, 2014 .

Enhanced efficiency in bottom tunnel junction InGaN blue LEDs

Debdeep Jena, Henryk Turski, Shyam Bharadwaj, 2021, OPTO.

Advanced concepts in Ga2O3 power and RF devices

Huili Grace Xing, Debdeep Jena, Wenshen Li, 2021, Ultrawide Bandgap Semiconductors.

Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz

Huili Grace Xing, Kazuki Nomoto, Debdeep Jena, 2021, 2021 Device Research Conference (DRC).

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Yu Cao, Huili Grace Xing, Kazuki Nomoto, 2015, IEEE Electron Device Letters.

Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

Debdeep Jena, Nan Ma, 2015 .

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

Huili Grace Xing, Qin Zhang, Tian Shen, 2012 .

Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

Debdeep Jena, Henryk Turski, Shyam Bharadwaj, 2018, Journal of Applied Physics.

Evidence of hot electrons generated from an AlN∕GaN high electron mobility transistor

Xiaodong Mu, Jacob B. Khurgin, Debdeep Jena, 2008 .

Stokes and anti-Stokes resonant Raman scatterings from biased GaN/AlN heterostructure

Xiaodong Mu, Jacob B. Khurgin, Debdeep Jena, 2008 .

Unique prospects for graphene-based terahertz modulators

Debdeep Jena, Tian Fang, Berardi Sensale-Rodriguez, 2011 .

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2017 .

Hot phonon effect on electron velocity saturation in GaN: A second look

Jacob B. Khurgin, Debdeep Jena, Yujie J. Ding, 2007 .

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

Huili Grace Xing, Debdeep Jena, Vladimir Protasenko, 2015, Scientific Reports.

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

Mark A. Wistey, Debdeep Jena, P. K. Kandaswamy, 2012 .

Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications

Debdeep Jena, Colin Wood, D. Jena, 2007 .

Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2019, Physical Review Applied.

Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.

Wei Liu, Kaustav Banerjee, Debdeep Jena, 2013, Nano letters.

Terahertz imaging employing graphene modulator arrays.

Huili Grace Xing, Lei Liu, Debdeep Jena, 2013, Optics express.

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2018, IEEE Electron Device Letters.

Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.

Patrick Fay, Debdeep Jena, Huili Xing, 2009 .

Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

Debdeep Jena, Vladimir Protasenko, Huili Xing, 2010, Science.

Polarization Effects in Semiconductors

Debdeep Jena, Colin Wood, D. Jena, 2008 .

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Wan Sik Hwang, Debdeep Jena, Kristof Tahy, 2012 .

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

Patrick Fay, Debdeep Jena, Huili Xing, 2015, 1508.05536.

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Debdeep Jena, Huili Xing, Satyaki Ganguly, 2011 .

Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

Debdeep Jena, Vladimir Protasenko, Huili Xing, 2011 .

Effect of high-K dielectrics on charge transport in graphene

Debdeep Jena, Tian Fang, Aniruddha Konar, 2009 .

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Patrick Fay, Debdeep Jena, Yu Cao, 2010 .

Efficient terahertz electro-absorption modulation employing graphene plasmonic structures

Huili Grace Xing, Lei Liu, Debdeep Jena, 2012 .

MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

Debdeep Jena, Shyam Bharadwaj, Vladimir Protasenko, 2017 .

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Huili Grace Xing, Gaudenzio Meneghesso, Enrico Zanoni, 2020, physica status solidi (a).

On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

Debdeep Jena, Gregory L. Snider, Raj K. Jana, 2013 .

Quantum transport in graphene nanoribbons patterned by metal masks

Huili Grace Xing, Debdeep Jena, Tian Fang, 2010 .

Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

Debdeep Jena, Christina M. Jones, Vladimir Protasenko, 2016 .

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

Debdeep Jena, Tian Fang, Ronghua Wang, 2010, IEEE Electron Device Letters.

Enhanced Terahertz Detection in Resonant Tunnel Diode-Gated HEMTs

Lei Liu, Patrick Fay, Debdeep Jena, 2012 .

Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals.

Huili Grace Xing, Andras Kis, Debdeep Jena, 2013, ACS nano.

A new class of electrically tunable metamaterial terahertz modulators.

Huili Grace Xing, Lei Liu, Debdeep Jena, 2012, Optics express.

Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

Huili Grace Xing, Lei Liu, Wei Li, 2012, Nano letters.

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz

Yu Cao, Patrick Fay, Zongyang Hu, 2012 .

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2017, IEEE Electron Device Letters.

High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

Huili Grace Xing, Samuel James Bader, Kazuki Nomoto, 2019, IEEE Electron Device Letters.

High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

Debdeep Jena, Yu Cao, D. Jena, 2007 .

Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids.

Huili Grace Xing, Debdeep Jena, Masaru Kuno, 2007, Nano letters.

High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

Soon Cheol Hong, Woong Choi, Debdeep Jena, 2012, Advanced materials.

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

Huili Grace Xing, Debdeep Jena, Vladimir Protasenko, 2011 .

Erratum: “Interband tunneling in two-dimensional crystal semiconductors” [Appl. Phys. Lett. 102, 132102 (2013)]

Debdeep Jena, Nan Ma, 2013 .

Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET)

Huili Grace Xing, David Esseni, Debdeep Jena, 2014, 72nd Device Research Conference.

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

Huili Grace Xing, Debdeep Jena, Amit Verma, 2013 .

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

Kaustav Banerjee, Debdeep Jena, Wei Liu, 2014 .

Thermally limited current carrying ability of graphene nanoribbons.

Eric Pop, Debdeep Jena, Kristof Tahy, 2011, Physical review letters.

Nitride LEDs and Lasers with Buried Tunnel Junctions

Huili Grace Xing, Debdeep Jena, Szymon Stanczyk, 2019 .

Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Byung Jin Cho, Wan Sik Hwang, Debdeep Jena, 2013, 1301.4527.

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Debdeep Jena, P. K. Kandaswamy, Vladimir Protasenko, 2014 .

Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes

Huili Grace Xing, Debdeep Jena, Cheng Liu, 2017 .

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

Soo Doo Chae, Wan Sik Hwang, Debdeep Jena, 2012, 1204.0474.

1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2016, IEEE Electron Device Letters.

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

Zongyang Hu, Debdeep Jena, Huili Xing, 2012 .

Interband Tunneling in 2D Crystal Semiconductors

Debdeep Jena, D. Jena, N. Ma, 2013 .

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2015 .

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

Jing Zhang, Debdeep Jena, Yu Kee Ooi, 2018 .

Exfoliated multilayer MoTe2 field-effect transistors

Huili Grace Xing, Wan Sik Hwang, Debdeep Jena, 2014 .

High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications

Patrick Fay, Xiang Gao, Paul Saunier, 2010, 2010 International Electron Devices Meeting.

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Debdeep Jena, Vladimir Protasenko, Sergei Rouvimov, 2017 .

Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski–Krastanov mode

Debdeep Jena, Vladimir Protasenko, Sergei Rouvimov, 2016 .

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

James S. Speck, Umesh K. Mishra, Debdeep Jena, 2002 .

Heat‐Transport Mechanisms in Superlattices

Debdeep Jena, Yu Cao, David G. Cahill, 2009 .

High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.

Deji Akinwande, Debdeep Jena, Shixuan Yang, 2013, ACS nano.

Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2017 .

A New Holistic Model of 2-D Semiconductor FETs

Samuel James Bader, Enrique G. Marin, Debdeep Jena, 2018, IEEE Transactions on Electron Devices.

Anisotropic thermal conductivity in single crystal β-gallium oxide

Fangyuan Sun, Debdeep Jena, Akito Kuramata, 2015 .

Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

Zongyang Hu, Debdeep Jena, Huili Xing, 2014 .

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2018 .

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2018, IEEE Transactions on Electron Devices.