Shyh-Chiang Shen

发表

Optically pumped vertical-cavity surface-emitting lasers at 375 nm with air-gap/Al0.05Ga0.95N distributed Bragg reflectors

Shuo Wang, Karan Mehta, Young Jae Park, 2019, OPTO.

Recent Advances in III-N High-Power Electronics

Hee Jin Kim, Shyh-Chiang Shen, Russell D. Dupuis, 2012 .

III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors

Young Jae Park, Theeradetch Detchprohm, Jialin Wang, 2019, OPTO.

DEVELOPMENT OF BROADBAND LOW ACTUATION VOLTAGE RF MEM SWITCHES

Shyh-Chiang Shen, Milton Feng, D. Becher, 2002 .

Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition

Yuh-Shiuan Liu, Shyh-Chiang Shen, P. Douglas Yoder, 2013, Photonics West - Optoelectronic Materials and Devices.

Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area

Nibir K. Dhar, Ashok K. Sood, Jay Lewis, 2019, OPTO.

(Invited) Development of III-Nitride Bipolar Transistor Switches and Rectifiers

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2017 .

III-nitride emitters and detectors for UV optoelectronic applications grown by metalorganic chemical vapor deposition

Ping Chen, Karan Mehta, Theeradetch Detchprohm, 2019, NanoScience + Engineering.

Illinois Nano EP Seminar Series Fall 2011: III-Nitride Power Transistor Switches for Next-Generation Electronics

Shyh-Chiang Shen, 2012 .

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Seong-Soo Kim, Shyh-Chiang Shen, Russell D. Dupuis, 2010, OPTO.

Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Theeradetch Detchprohm, Yuh-Shiuan Liu, Shyh-Chiang Shen, 2014, Photonics West - Optoelectronic Materials and Devices.

Low-cost GaAs MESFET and InP HFET technologies for 40-Gb/s OEICs

Milton Feng, Shyh-Chiang Shen, D. Becher, 2000, SPIE Optics + Photonics.

III-Nitride Power Electronics

Shyh-Chiang Shen, 2017 .

Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation

Karan Mehta, Young Jae Park, Theeradetch Detchprohm, 2018, 2018 76th Device Research Conference (DRC).

High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates

Shyh-Chiang Shen, Russell D. Dupuis, Yun Zhang, 2007, SPIE Security + Defence.

Development for ultraviolet vertical cavity surface emitting lasers

Karan Mehta, Theeradetch Detchprohm, Shyh-Chiang Shen, 2016, SPIE OPTO.

Optical stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures

Ping Chen, Young Jae Park, Theeradetch Detchprohm, 2019, OPTO.

Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays

Parminder Ghuman, Ashok K. Sood, John W. Zeller, 2021, OPTO.

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Theeradetch Detchprohm, Yuh-Shiuan Liu, Shyh-Chiang Shen, 2013 .

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2017 .

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Yuh-Shiuan Liu, Shyh-Chiang Shen, P. Douglas Yoder, 2013 .

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Christoph Reich, Michael Kneissl, Theeradetch Detchprohm, 2014 .

Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates

Shyh-Chiang Shen, Russell D. Dupuis, Xiaogang Bai, 2009, IEEE Photonics Technology Letters.

Development of High Gain GaN / AlGaN Avalanche Photodiode Arrays for UV Detection and Imaging Applications

Ashok K. Sood, Yash R. Puri, John W. Zeller, 2017 .

GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation

Shyh-Chiang Shen, Russell D. Dupuis, Jae-Hyun Ryou, 2008 .

Temperature-Dependent Characteristics of GaN Homojunction Rectifiers

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2015, IEEE Transactions on Electron Devices.

Rf' Mem Switches I . Introduciion

Milton Feng, Shyh-Chiang Shen, David Caruth, 2004 .

Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

W. Alan Doolittle, Shyh-Chiang Shen, P. Douglas Yoder, 2018, Applied Physics Letters.

Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

Shyh-Chiang Shen, Yi-Che Lee, Jae-Hyun Ryou, 2009, IEEE Electron Device Letters.

Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices

Young Jae Park, Theeradetch Detchprohm, Yuh-Shiuan Liu, 2018, IEEE Journal of Quantum Electronics.

Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Shyh-Chiang Shen, P. Douglas Yoder, Russell D. Dupuis, 2008 .

Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

Milton Feng, Shyh-Chiang Shen, JianJang Huang, 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

High-Responsivity GaN/InGaN Heterojunction Phototransistors

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2016, IEEE Photonics Technology Letters.

An InP/InGaAs SHBT Technology for High-Speed Monolithic Optical Receivers

Milton Feng, Shyh-Chiang Shen, Doris A. Chan, 2003 .

GaN/InGaN avalanche phototransistors

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2015 .

III-Nitride Platforms

Shyh-Chiang Shen, 2012 .

Performance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications

Milton Feng, Shyh-Chiang Shen, D. Caruth, 2002 .

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Theeradetch Detchprohm, Shyh-Chiang Shen, P. Douglas Yoder, 2015 .

Bipolar III-N high-power electronic devices

Shyh-Chiang Shen, Russell D. Dupuis, Zachary Lochner, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2)

Shyh-Chiang Shen, Russell D. Dupuis, Zachary Lochner, 2012 .

Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches

Shyh-Chiang Shen, 2001 .

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

Michael Wraback, Edward A. Preble, Shyh-Chiang Shen, 2006 .