H. Mitlehner

Current Developments in High-Power Thyristors

H.-J. Schulze, H. Mitlehner, 1994 .

ANALYSIS OF STATIC AND DYNAMIC BEHAVIOUR OF 4H-SIC HIGH VOLTAGE DIODES

Ulrich Weinert, Dietrich Stephani, W. Bartsch, 1997 .

SiC-Powerdiodes: Design and performance

W. Bartsch, B. Bloecher, S. Gediga, 2007, 2007 European Conference on Power Electronics and Applications.

SiC power devices with low on-resistance for fast switching applications

P. Friedrichs, D. Stephani, H. Mitlehner, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

Key power semiconductor device concepts for the next decade

L. Lorenz, H. Mitlehner, H. Mitlehner, 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

Electrical performance of triple implanted vertical silicon carbide MOSFETs with low on-resistance

P. Friedrichs, D. Stephani, B. Weis, 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

Stacked high voltage switch based on SiC VJFETs

P. Friedrichs, R. Elpelt, D. Stephani, 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

Light-activated auxiliary thyristor for high-voltage applications

H. Mitlehner, 1985 .

An 1800 V triple implanted vertical 6H-SiC MOSFET

Peter Friedrichs, D. Stephani, H. Mitlehner, 1999 .

Periphery protection for silicon carbide devices: state of the art and simulation

Dominique Planson, Jean-Pierre Chante, S. Ortolland, 1997 .