J. V. Smagina

Surface morphology transitions induced by ion beam action during Ge/Si MBE

A. K. Gutakovskii, A. V. Dvurechenskii, V. A. Armbrister, 2004, International Conference on Micro- and Nano-Electronics.

Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy

V. A. Zinoviev, J. V. Smagina, A. Dvurechenskii, 2010 .

Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures

J. V. Smagina, A. Dvurechenskii, A. Nenashev, 2008 .

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

J. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2005 .

MODIFICATION OF GROWTH MODE OF Ge ON Si BY PULSED LOW-ENERGY ION-BEAM IRRADIATION

J. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2004 .

Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substrates

J. V. Smagina, A. Dvurechenskii, A. Kozhukhov, 2011 .

Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation

V. A. Zinoviev, J. V. Smagina, A. Dvurechenskii, 2009 .

MBE growth of Ge/Si quantum dots upon low-energy pulsed ion irradiation

J. V. Smagina, A. Dvurechenskii, N. Sobolev, 2008 .