Einar Ö. Sveinbjörnsson

发表

The 23rd Nordic Semiconductor Meeting

Sveinn Olafsson, Einar Ö. Sveinbjörnsson, 2010 .

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee, 2008 .

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Tamara Rudenko, Einar Ö. Sveinbjörnsson, I. Tyagulski, 2005 .

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Rik Jos, Einar Ö. Sveinbjörnsson, T. Rodle, 2005 .

Room temperature electroluminescence from dislocation‐rich silicon

Einar Ö. Sveinbjörnsson, E. Sveinbjörnsson, Jörg Weber, 1996 .

Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p+ poly-Si1−xGex and poly-Si gate materials

Magnus Willander, Matty Caymax, Per Lundgren, 2002 .

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Herbert Zirath, Niklas Rorsman, Hans Hjelmgren, 2019, IEEE Transactions on Electron Devices.

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C"V… characterization of metal-insulator-semiconductor-heterostructure capacitors

Niklas Rorsman, Martin Fagerlind, Einar Ö. Sveinbjörnsson, 2010 .

On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

Einar Ö. Sveinbjörnsson, Fredrik Allerstam, Halldór Örn Ólafsson, 2002 .

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Rik Jos, Einar Ö. Sveinbjörnsson, H. Ólafsson, 2007 .

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee, 2008 .

Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps

Einar Ö. Sveinbjörnsson, Eckhard Pippel, E. Pippel, 2005 .