S. Garg

A sixteen level scheme enabling 64 Mbit flash memory using 16 Mbit technology

S.K. Banerjee, D.L. Kencke, R. Richart, 1996, International Electron Devices Meeting. Technical Digest.

Substrate-current-induced hot electron (SCIHE) injection: a new convergence scheme for flash memory

B. Bandyopadhyay, David L. Kencke, E. Ibok, 1995, Proceedings of International Electron Devices Meeting.

A convergence scheme for over-erased flash EEPROM's using substrate-bias-enhanced hot electron injection

B. Bandyopadhyay, C.-Y. Hu, E. Ibok, 1995, IEEE Electron Device Letters.