A. Akheyar

High-k materials for tunnel barrier engineering in future memory technologies

Pieter Blomme, Bogdan Govoreanu, Maarten Rosmeulen, 2004 .

Fully-Depleted SOI CMOS Technology for Heterogeneous Micropower, High-Temperature or RF Microsystems

Denis Flandre, Jean-Pierre Raskin, Stéphane Adriaensen, 2001 .

Fully CMOS-compatible low-power microheater

Denis Flandre, Jean-Pierre Raskin, A. Akheyar, 2002, Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS.

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Z. Li, Luigi Pantisano, Tom Schram, 2007, Microelectron. Reliab..

Novel process to pattern selectively dual dielectric capping layers using soft-mask only

A. Akheyar, T. Chiarella, C. Vrancken, 2008, 2008 Symposium on VLSI Technology.

Immobilization of DNA on CMOS compatible materials

Denis Flandre, Luis Moreno Hagelsieb, Rémi Pampin, 2003 .

Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal

S. De Gendt, S. Van Elshocht, A. Akheyar, 2007, 2007 IEEE International Electron Devices Meeting.

Optimized ultra-low thermal budget process flow for advanced High-K / Metal gate first CMOS using laser-annealing technology

C. Ortolland, A. Akheyar, T. Chiarella, 2006, 2009 Symposium on VLSI Technology.

The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics

S. Van Elshocht, A. Akheyar, S. Biesemans, 2008, IEEE Electron Device Letters.

Positive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETs

R. Degraeve, B. Kaczer, A. Akheyar, 2009, 2009 IEEE International Reliability Physics Symposium.