Kazumi Iwadate

发表

Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)

Yasuo Takahashi, Yasuo Takahashi, Kenji Kurihara, 1996 .

Metrology of Atomic Force Microscopy for Si Nano-Structures

Kenji Kurihara, Hideo Namatsu, Masao Nagase, 1995 .

Silicon single-electron devices

Yasuo Takahashi, Kenji Kurihara, Hideo Namatsu, 1999 .

Fabrication of sub‐10‐nm silicon lines with minimum fluctuation

Kenji Kurihara, Hideo Namatsu, Masao Nagase, 1995 .

A novel high‐speed nanometric electron beam lithography system: EB–F

Katsuhiro Harada, Kazuo Hirata, Kazumi Iwadate, 1987 .

Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water

Kenji Kurihara, Hideo Namatsu, Masao Nagase, 1995 .

Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation

Yasuo Takahashi, Kenji Kurihara, Hideo Namatsu, 1995 .

10-nm silicon lines fabricated in (110) silicon

Kenji Kurihara, Hideo Namatsu, Masao Nagase, 1995 .