Erik Janzén

发表

High temperature furnace for liquid phase epitaxy of silicon carbide in microgravity 1 1 Based on pa

Christian Lockowandt, Mikael Syväjärvi, Rositza Yakimova, 1999 .

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

Marek Skowronski, Anant Agarwal, James A. Cooper, 2001 .

Electron effective masses in 4H SiC

Bo Monemar, Bruno K. Meyer, Erik Janzén, 1995 .

Rolling performance of carbon nitride-coated bearing components in different lubrication regimes

Lars Hultman, Konstantinos D. Bakoglidis, Ivan Gueorguiev Ivanov, 2017 .

Chloride-based CVD growth of silicon carbide for electronic applications.

Yaroslav Koshka, Anne Henry, Shin-ichi Nishizawa, 2012, Chemical reviews.

Carbon-vacancy related defects in 4H- and 6H-SiC

Bo Monemar, Erik Janzén, E. Janzén, 1999 .

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Erik Janzén, E. Janzén, U. Forsberg, 2013 .

Isolated electron spins in silicon carbide with millisecond coherence times.

Takeshi Ohshima, Jawad Ul Hassan, Erik Janzén, 2014, Nature materials.

The mechanism for cubic SiC formation on off-oriented substrates

Christer Hallin, Béla Pécz, Erik Janzén, 1997 .

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Michael Heuken, Pierre Gibart, Bernard Beaumont, 2007 .

Characterisation and Defects in Silicon Carbide

H. Lendenmann, Björn Magnusson, L. Storasta, 2002 .

Electronic band structure in hexagonal close-packed Si polytypes

Clas Persson, Erik Janzén, E. Janzén, 1998 .

Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

H. Lendenmann, Christer Hallin, Henrik Jacobson, 2004 .

A 3 kV Schottky barrier diode in 4H-SiC

Tsunenobu Kimoto, Qamar Ul Wahab, Anne Henry, 1998 .

Optical Characterization of Deep Level Defects in SiC

Björn Magnusson, Erik Janzén, E. Janzén, 2005 .

The minority carrier lifetime of n‐type 4H‐ and 6H‐SiC epitaxial layers

Christer Hallin, J. P. Bergman, Erik Janzén, 1996 .

EPR identification of intrinsic defects in SiC

Takeshi Ohshima, Norikazu Mizuochi, Takahide Umeda, 2008 .

Layer-number determination in graphene on SiC by reflectance mapping

Alexei Zakharov, Jawad ul Hassan, Rositsa Yakimova, 2014 .

SiC Crystal Growth by HTCVD

Björn Magnusson, Peder Bergman, Erik Janzén, 2004 .

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Takeshi Ohshima, Carl Hemmingsson, Erik Janzén, 2014 .

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

John W. Palmour, H. Lendenmann, Marek Skowronski, 2006 .

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Daniel Nilsson, Per-Olof Holtz, Chih-Wei Hsu, 2014, Light: Science & Applications.

Photoluminescence studies of porous silicon carbide

Anne Henry, Christopher Harris, Erik Janzén, 1995 .

Nitrogen doping of epitaxial silicon carbide

Anne Henry, Örjan Danielsson, Erik Janzén, 2002 .

Electrothermal actuation of silicon carbide ring resonators

Enrico Mastropaolo, Rebecca Cheung, Anne Henry, 2009 .

Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Daniel Nilsson, Ingemar Persson, Chih-Wei Hsu, 2015 .

A 4.5 kV 6H silicon carbide rectifier

Anne Henry, Susan Savage, J. P. Bergman, 1995 .

Linköping University Electronic Press

Anne Henry, Jawad ul Hassan, J. P. Bergman, 2012 .

SiC power device passivation using porous SiC

Christopher Harris, Christer Hallin, Erik Janzén, 1995 .

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C"V… characterization of metal-insulator-semiconductor-heterostructure capacitors

Niklas Rorsman, Martin Fagerlind, Einar Ö. Sveinbjörnsson, 2010 .

High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

Tsunenobu Kimoto, Qamar Ul Wahab, Anne Henry, 1997 .

Silicon vacancy related TV2a center in 4H-SiC

Z. Zolnai, Erik Janzén, Nguyen Tien Son, 2003 .

Identification of divacancies in 4H-SiC

Björn Magnusson, Takeshi Ohshima, Adam Gali, 2006 .