Rimma Zhytnytska

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2013, Microelectron. Reliab..

Reliability issues of GaN based high voltage power devices

Frank Brunner, Matthias Schulz, Joachim Würfl, 2011, Microelectron. Reliab..

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Frank Brunner, Joachim Würfl, Arne Knauer, 2015, MRS Bulletin.

(Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

Frank Brunner, Arne Knauer, Markus Weyers, 2011 .

Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

Frank Brunner, Joachim Würfl, Arne Knauer, 2013 .

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Frank Brunner, Joachim Wurfl, Arne Knauer, 2013, IEEE Transactions on Electron Devices.

70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Frank Brunner, Sibylle Dieckerhoff, Joachim Wurfl, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).