T. Cabout

HfO 2 -based RRAMS for integration on advanced CMOS technology nodes

G. Molas, Elisa Vianello, L. Perniola, 2013 .

Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO2-RRAM integrated in a 65nm CMOS technology

S. Jeannot, V. Jousseaume, M. Gros-Jean, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Embedded Select in Trench Memory (eSTM), best in class 40nm floating gate based cell: a process integration challenge

Y. Escarabajal, V. Arnal, S. Audran, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

On the impact of the oxide thickness and reset conditions on activation energy of HfO2 based ReRAM extracted through disturb measurements

S. Jeannot, V. Jousseaume, L. Perniola, 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.

Fully Analytical Compact Model of OxRAM Based on Joule Heating and Electromigration for DC and Pulsed Operation

C. Cagli, T. Cabout, E. Jalaguier, 2016, 2016 IEEE 8th International Memory Workshop (IMW).

Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design

Olivier Thomas, Santhosh Onkaraiah, Elisa Vianello, 2013, Proceedings of 2013 International Conference on IC Design & Technology (ICICDT).

Effect of SET temperature on data retention performances of HfO2-based RRAM cells

C. Muller, S. Jeannot, E. Vianello, 2014, 2014 IEEE 6th International Memory Workshop (IMW).