Juan A. Fernández

发表

Analysis of the insulated base MOS-controlled thyristor structure (IBMCT)

M. Vellvehi, P. Godignon, David Flores, 1994 .

Comparison of EST structures with NMOS and PMOS transistors for controlling the thyristor current

Juan A. Fernández, Jose Rebollo, J. Millan, 1998 .

Analysis of new lateral insulated gate bipolar transistor structures for power applications

Juan A. Fernández, Jose Rebollo, J. Millan, 1993 .

The dual MOS-gated thyristor (DMGT) structure

Juan A. Fernández, Jose Rebollo, J. Millan, 1998 .

The switching behaviour of the shorted anode base resistance MOS-controlled thyristor

M. Vellvehi, Juan A. Fernández, Jose Rebollo, 1998 .

Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor

M. Vellvehi, Juan A. Fernández, J. Millan, 1999 .

Numerical simulation of the insulated base MOS-controlled thyristor

M. Vellvehi, Juan A. Fernández, Jose Rebollo, 1996 .

A simplified low-voltage smart power technology

Juan A. Fernández, Jose Rebollo, J. Millan, 1991 .

Physical behaviour and electrical characteristics of the insulated base transistor

X. Jorda, Juan A. Fernández, Jose Rebollo, 2002 .

A new lateral IGBT for high temperature operation

M. Vellvehi, Juan A. Fernández, Jose Rebollo, 1997 .

Standard and Shorted Anode Non-Punch-Through Emitter Switched Thyristors

M. Vellvehi, P. Godignon, David Flores, 1997 .

Design considerations of a MOS-bipolar Darlington structure: The vertical insulated base transistor (IBT)

Jean-Pierre Chante, Juan A. Fernández, Jose Rebollo, 1996 .

A steady-state VDMOS transistor model

Juan A. Fernández, Jose Rebollo, J. Millan, 1992 .

An optimized bidirectional lightning surge protection semiconductor device

X. Jorda, Juan A. Fernández, Jose Rebollo, 1999 .

High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

Juan A. Fernández, Jose Rebollo, Phillippe Godignon, 1996 .