Jose Rebollo

发表

Analysis of the insulated base MOS-controlled thyristor structure (IBMCT)

M. Vellvehi, P. Godignon, David Flores, 1994 .

Comparison of EST structures with NMOS and PMOS transistors for controlling the thyristor current

Juan A. Fernández, Jose Rebollo, J. Millan, 1998 .

Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K

M. Vellvehi, Jose Rebollo, J. Millan, 1999 .

Analysis of new lateral insulated gate bipolar transistor structures for power applications

Juan A. Fernández, Jose Rebollo, J. Millan, 1993 .

The dual MOS-gated thyristor (DMGT) structure

Juan A. Fernández, Jose Rebollo, J. Millan, 1998 .

A Review of Si MOS-Gated Power Switches and PiN Rectifiers

Jose Rebollo, Xavier Perpiñà, I. Cortes, 2012 .

The switching behaviour of the shorted anode base resistance MOS-controlled thyristor

M. Vellvehi, Juan A. Fernández, Jose Rebollo, 1998 .

A numerical study of scaling issues for trench power MOSFETs

I. Cortes, Jose Rebollo, David Flores, 2005 .

POWER LATERAL DMOS TRANSISTOR TEST STRU

P. Godignon, Jose Rebollo, S. Hidalgo, 1993 .

Design and optimisation of suitable edge terminations for 6.5 kV IGBTs

M. Vellvehi, Jose Rebollo, L. Coulbeck, 2002 .

Design of a reliable planar edge termination for SiC power devices

Jose Rebollo, Phillippe Godignon, G. Brezeanu, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Numerical simulation of the insulated base MOS-controlled thyristor

M. Vellvehi, Juan A. Fernández, Jose Rebollo, 1996 .

Analysis of STI Thin-SOI LDMOS transistors for Smart Power and high frequency applications

I. Cortes, Jose Rebollo, David Flores, 2008 .

Lateral Punch-Through TVS Devices: Design and Fabrication

Jose Rebollo, Salvador Hidalgo, David Flores, 2009, 2009 Spanish Conference on Electron Devices.

A 200 V silicon-on-sapphire LDMOS structure with a step oxide extended field plate

Jose Rebollo, J. Millan, David Flores, 2004 .

Non-uniform temperature and heat generation in thin-film SOI LDMOS with uniform drift doping

I. Cortes, Jose Rebollo, David Flores, 2006 .

A numerical study of field plate configurations in RF SOI LDMOS transistors

I. Cortes, Jose Rebollo, David Flores, 2006 .

A Survey of Wide Bandgap Power Semiconductor Devices

Philippe Godignon, Jose Rebollo, Xavier Perpina, 2014, IEEE Transactions on Power Electronics.

A simplified low-voltage smart power technology

Juan A. Fernández, Jose Rebollo, J. Millan, 1991 .

A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices

Jose Rebollo, David Flores, Salvador Hidalgo, 2005 .

Radial confinement in lateral power devices

M. Vellvehi, Jose Rebollo, David Flores, 2001 .

Physical behaviour and electrical characteristics of the insulated base transistor

X. Jorda, Juan A. Fernández, Jose Rebollo, 2002 .

A new lateral IGBT for high temperature operation

M. Vellvehi, Juan A. Fernández, Jose Rebollo, 1997 .

Standard and Shorted Anode Non-Punch-Through Emitter Switched Thyristors

M. Vellvehi, P. Godignon, David Flores, 1997 .

Design considerations of a MOS-bipolar Darlington structure: The vertical insulated base transistor (IBT)

Jean-Pierre Chante, Juan A. Fernández, Jose Rebollo, 1996 .

Experimental demonstration of an anode voltage sensor for high voltage IGBT over-voltage protection

C. Caramel, Jose Rebollo, Salvador Hidalgo, 2010 .

Analysis of the breakdown voltage in SOI and SOS technologies

M. Vellvehi, Jaume Roig, Jose Rebollo, 2002 .

Study of novel techniques for reducing self-heating effects in SOI power LDMOS

M. Vellvehi, Jaume Roig, Jose Rebollo, 2002 .

On the feasibility of superjunction thick-SOI power LDMOS transistors for RF base station applications

I. Cortes, Jaume Roig, Jose Rebollo, 2007 .

The Bi-IGBT: a low losses power structure by IGBT parallel association

P. Austin, C. Caramel, J.-L. Sanchez, 2008 .

An effective thermal conductivity measurement system

M. Vellvehi, J. Coleto, Jose Rebollo, 2004 .

A steady-state VDMOS transistor model

Juan A. Fernández, Jose Rebollo, J. Millan, 1992 .

Analysis of the quasi-saturation region of high voltage VDMOS devices

E. Figueras, Jose Rebollo, E. Lora-Tamayo, 1987 .

Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point

Jose Rebollo, Emilio Lora-Tamayo, F. Serra-Mestres, 1987 .

An optimized bidirectional lightning surge protection semiconductor device

X. Jorda, Juan A. Fernández, Jose Rebollo, 1999 .

Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

Philippe Godignon, Jose Rebollo, Josep Montserrat, 2017 .

The thin SOI TGLDMOS transistor: a suitable power structure for low voltage applications

I. Cortes, Jose Rebollo, Salvador Hidalgo, 2007 .

Modeling of non-uniform heat generation in LDMOS transistors

Jaume Roig, Jose Rebollo, Salvador Hidalgo, 2005 .

High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

Juan A. Fernández, Jose Rebollo, Phillippe Godignon, 1996 .