J. Millan

X. Jorda, M. Vellvehi, P. Godignon, 2006, EuroSime 2006 - 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems.

Gate oxides on 4H-SiC substrates grown or annealed in N/sub 2/O/Ar mixture

P. Godignon, J. Millan, D. Tournier, 2004, 2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748).

Clamped inductive turn-off failure in high-voltage NPT-IGBTs under overloading conditions

X. Perpina, X. Jorda, J. Millan, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

A 200 V silicon-on-sapphire LDMOS structure with a step oxide extended field plate

Jose Rebollo, J. Millan, David Flores, 2004 .

Intelligent bidirectional power switch module for matrix converter applications

X. Jorda, M. Vellvehi, J.L. Galvez, 2007, 2007 European Conference on Power Electronics and Applications.

1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes

X. Jorda, M. Vellvehi, P. Godignon, 2007, 2007 European Conference on Power Electronics and Applications.

A cost-effective high-voltage p-channel MOSFET implemented in a standard twin-tub technology: integrated IGBT gate driver

X. Jorda, J. Millan, A. Perez-Tomas, 2005, Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005..

Edge termination impact on clamped inductive turn-off failure in high-voltage IGBTs under overcurrent conditions

X. Perpina, X. Jorda, J. Millan, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

3.3 kV IGBTs with an integrated anode voltage sensor

C. Caramel, S. Hidalgo, J. Millan, 2008 .

A simplified low-voltage smart power technology

Juan A. Fernández, Jose Rebollo, J. Millan, 1991 .

A simplified low-voltage smart power technology

P. Godignon, J. Fernandez, J. Millan, 1991, IEEE Electron Device Letters.

An automated approach on electrical technology characterization and analysis

J. Millan, Emilio Lora-Tamayo, C. Perell, 1996 .

Standard and Shorted Anode Non-Punch-Through Emitter Switched Thyristors

M. Vellvehi, P. Godignon, David Flores, 1997 .

Design considerations of a MOS-bipolar Darlington structure: The vertical insulated base transistor (IBT)

Jean-Pierre Chante, Juan A. Fernández, Jose Rebollo, 1996 .

Towards fully integrated SiC cascade power switches for high voltage applications

F. Udrea, J. Millan, A. Mihaila, 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

MEDICI simulation of 6H-SiC oxide ramp profile (ORP) Schottky structure

J. Millan, J. Rebollo, G. Dilimot, 1996, 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.

Silicon carbide controlled current limiter, current limitation strategies, foreseen applications and benefits

X. Jorda, J. Millan, D. Tournier, 2004, The 4th International Power Electronics and Motion Control Conference, 2004. IPEMC 2004..

Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

J. Millan, James A. Covington, Philip A. Mawby, 2006 .

Recent developments in SiC power devices and related technology

J. Millan, D. Tournier, P. Godignon, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

A HfO2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology

P. Moens, H. De Vleeschouwer, P. Godignon, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

The Bi-IGBT: a low losses power structure by IGBT parallel association

P. Austin, C. Caramel, J.-L. Sanchez, 2008 .

Transmission Fabry–Pérot interference thermometry for thermal characterization of microelectronic devices

M. Vellvehi, J. Millan, Xavier Jordà, 2006 .

Schottky versus bipolar 3.3 kV SiC diodes

J. Millan, Amador Pérez-Tomás, Xavier Jordà, 2008 .

Design and Fabrication of Improved Resurfed LDMOS Devices

S. Hidalgo, J. Millan, J. Rebollo, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

Thermal characterization of Insulated Metal Substrates with a power test chip

X. Perpina, X. Jorda, M. Vellvehi, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

SiC junction FETs - a state of the art review

F. Udrea, P. Godignon, J. Millan, 2005, CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005..

A steady-state VDMOS transistor model

Juan A. Fernández, Jose Rebollo, J. Millan, 1992 .

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

J. Millan, Amador Pérez-Tomás, Xavier Jordà, 2009 .

Comparison Between Simulated and Experimental Thermal Resistances of Power Devices Using an Specific Test Chip

X. Jorda, M. Vellvehi, J.L. Galvez, 2006, EuroSime 2006 - 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems.

An ON-resistance closed form for VDMOS devices

J. Millan, J. Rebollo, F. Berta, 1989, IEEE Electron Device Letters.

Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range

X. Jorda, M. Vellvehi, J. Millan, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

An optimized bidirectional lightning surge protection semiconductor device

X. Jorda, Juan A. Fernández, Jose Rebollo, 1999 .

Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes

J. Millan, D. Tournier, A. Perez-Tomas, 2005, IEEE Transactions on Electron Devices.

GaN transistor characteristics at elevated temperatures

J. Millan, Amador Pérez-Tomás, Phillippe Godignon, 2009 .

Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs

X. Jorda, M. Vellvehi, J. Millan, 2014, 2014 International Semiconductor Conference (CAS).

Wide Band Gap power semiconductor devices

P. Godignon, J. Millan, 2013 .