Herbert Kroemer

发表

Devices for the Future: A Peek into the Next Century

Herbert Kroemer, 1994 .

Luminescence polarization anisotropy in (Al,Ga)As serpentine quantum wire arrays

James L. Merz, Herbert Kroemer, Michael L. Miller, 1992, Other Conferences.

Heterostructure bipolar transistors: What should we build?

Herbert Kroemer, H. Kroemer, 1983 .

Heterostructures for Everything: Device Principles of the 1980's?

Herbert Kroemer, 1980 .

The rise of the laser. Interview by Joerg Heber.

Herbert Kroemer, 2010, Nature materials.

Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental work

Herbert Kroemer, H. Kroemer, 1986 .

Normal-incidence quantum-well infrared photodetectors utilizing ellipsoidal valley intersubband transitions in n-type GaSb-AlSb multiquantum wells

L. Samoska, Herbert Kroemer, B. Brar, 1993, Optics & Photonics.

Improved Charge Control Performance in InAs/AlSb-Based Heterostructure Field-Effect Transistors

Herbert Kroemer, Colombo R. Bolognesi, E. J. Caine, 1994 .

All that Glitters isn’t Silicon

Herbert Kroemer, 1996 .

The Double-Heterostructure Concept: How It Got Started

Herbert Kroemer, 2013, Proceedings of the IEEE.

Far-infrared harmonic generation from semiconductor heterostructures

Arthur C. Gossard, Andrea Markelz, Herbert Kroemer, 1993, Photonics West - Lasers and Applications in Science and Engineering.

Direct patterning of surface quantum wells with an atomic force microscope

Herbert Kroemer, H. Kroemer, J. Kotthaus, 1998 .

Theory of a Wide-Gap Emitter for Transistors

Herbert Kroemer, H. Kroemer, 1957, Proceedings of the IRE.

Far-infrared photoresponse of the InAs/GaInSb superlattice

Herbert Kroemer, Ian H. Campbell, Colombo R. Bolognesi, 1991 .

Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates

Randall S. Geels, Herbert Kroemer, Pierre Petroff, 1988 .

Quality of AlAs‐like and InSb‐like interfaces in InAs/AlSb superlattices: An optical study

Herbert Kroemer, J. Spitzer, B. Brar, 1993 .

QUASI-ELECTRIC FIELDS AND BAND OFFSETS: TEACHING ELECTRONS NEW TRICKS

Herbert Kroemer, H. Kroemer, 2002 .

1.55-/spl mu/m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs

Larry A. Coldren, Herbert Kroemer, Eric M. Hall, 2001 .

Heterostructure devices: A device physicist looks at interfaces

Herbert Kroemer, H. Kroemer, 1983 .

Interface roughness scattering in InAs/AlSb quantum wells

Herbert Kroemer, Colombo R. Bolognesi, John H. English, 1992 .

Subcubic power dependence of third-harmonic generation for in-plane, far-infrared excitation of InAs quantum wells

Herbert Kroemer, Chanh Nguyen, Elisabeth G. Gwinn, 1994 .

On the nature of the negative-conductivity resonance in a superlattice Bloch oscillator

Herbert Kroemer, 2000 .

Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification

James L. Merz, Herbert Kroemer, A. Y. Cho, 1984 .

Some Design Considerations for Multi-Quantum-Well Lasers

Herbert Kroemer, Hiroshi Okamoto, H. Okamoto, 1984 .

Hot-electron relaxation effects in devices☆

Herbert Kroemer, H. Kroemer, 1978 .

Electrically-pumped, single-epitaxial VCSELs at 1.55 /spl mu/m with Sb-based mirrors

Larry A. Coldren, Herbert Kroemer, Eric M. Hall, 1999 .

Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature

Mathew C. Schmidt, Shuji Nakamura, Herbert Kroemer, 2008 .

Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

John E. Bowers, Herbert Kroemer, Chi-Kuang Sun, 1996 .

Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface

Herbert Kroemer, John H. English, G. Tuttle, 1990 .

Methane/hydrogen‐based reactive ion etching of InAs, InP, GaAs, and GaSb

Herbert Kroemer, Evelyn L. Hu, Chanh Nguyen, 1991 .

Theory of the Gunn effect

Herbert Kroemer, H. Kroemer, 1964 .

Intersubband transitions in InAs/AlSb quantum wells

Achim Wixforth, Herbert Kroemer, Chanh Nguyen, 1993 .

Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region

Herbert Kroemer, H. Kroemer, 1985 .

Polar-on-nonpolar epitaxy

Herbert Kroemer, H. Kroemer, 1987 .

AlAsSb-based distributed Bragg reflectors using InAlGaAs as high-index layer

Larry A. Coldren, Herbert Kroemer, Eric M. Hall, 1999 .

Introduction to superconducting circuits

Herbert Kroemer, Alan M. Kadin, A. Kadin, 1999 .

A proposed class of hetero-junction injection lasers

Herbert Kroemer, H. Kroemer, 1963 .

Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of composition

Herbert Kroemer, Alex Zunger, Rita Magri, 2005 .

Measurement of isotype heterojunction barriers by C‐V profiling

James S. Harris, Herbert Kroemer, D. D. Edwall, 1980 .

Quantum mechanics

Herbert Kroemer, 1994 .

88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers

Larry A. Coldren, Herbert Kroemer, Eric M. Hall, 2001 .

Expert opinion: Nano-whatever: Do we really know where we are heading?

Herbert Kroemer, 2005 .

On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende‐on‐diamond systems

Herbert Kroemer, Kenneth J. Polasko, K. Polasko, 1980 .

Raman scattering in a Ga1−xInxP strained heterostructure

Herbert Kroemer, R. Braunstein, H. Kroemer, 1989 .

Negative conductance in semiconductors

Herbert Kroemer, 1968, IEEE Spectrum.

Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction by C‐V profiling

S. I. Long, Herbert Kroemer, Dubravko I. Babic, 1987 .

GaAs on Si and related systems: Problems and prospects

Herbert Kroemer, Pierre Petroff, P. Petroff, 1989 .