Boualem Djezzar

发表

An Accurate Combination of on-the-fly Interface Trap and Threshold Voltage Methods for NBTI Degradation Extraction

Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, 2014, J. Electron. Test..

Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2014, 2014 9th International Design and Test Symposium (IDT).

Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2013, 2013 25th International Conference on Microelectronics (ICM).

Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2014, 2014 9th International Design and Test Symposium (IDT).

What are these border traps: introduced by radiation and seen by charge pumping technique?

Boualem Djezzar, 2001, 2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310).

New oxide-trap extraction method for irradiated MOSFET devices at high frequencies

Boualem Djezzar, Slimane Oussalah, A. Smatti, 2003, Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442).

On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET's

Boualem Djezzar, 2002, Microelectron. Reliab..

A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2013, Microelectron. Reliab..

Design and optimization of a low-power and very-high-performance 0.25 μm advanced pnp bipolar process

Boualem Djezzar, 1998 .

Sizing of the CMOS 6T-SRAM cell for NBTI ageing mitigation

Hamid Bentarzi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2020, IET Circuits Devices Syst..

Does NBTI effect in MOS transistors depend on channel length?

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2014, 2014 26th International Conference on Microelectronics (ICM).

Automated MOS Transistor Gamma Degradation Measurements Based on LabVIEW Environment

Boualem Djezzar, Slimane Oussalah, 2011 .

Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field

Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, 2017, IEEE Transactions on Device and Materials Reliability.

NBTI stress on power VDMOS transistors under low magnetic field

Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

Hakim Tahi, Boualem Djezzar, 2009, 2009 European Conference on Radiation and Its Effects on Components and Systems.

Deep experimental investigation of NBTI impact on CMOS inverter reliability

Hakim Tahi, Boualem Djezzar, Amel Chenouf, 2012, 2012 24th International Conference on Microelectronics (ICM).

A comparative study of different contact resistance test structures dedicated to the power process technology

Boualem Djezzar, Slimane Oussalah, R. Jérisian, 2005 .

Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2014, Microelectron. Reliab..

Reaction-diffusion model for interface traps induced by BTS stress including H+, H and H2 as diffusion species

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2014, 2014 9th International Design and Test Symposium (IDT).

Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet?

Hakim Tahi, Boualem Djezzar, B. Djezzar, 2009, 2009 IEEE International Reliability Physics Symposium.

A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2012 .

On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, 2015 .

On the turn-around phenomenon in n-MOS transistors under NBTI conditions

A. Benabdelmoumene, Hakim Tahi, Boualem Djezzar, 2016 .

Investigation of NBTI degradation on power VDMOS transistors under magnetic field

Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).