C. E. Stutz

发表

Optimization of the QWITT diode using equivalent circuit models

D. W. Whitson, R. Neidhard, M. J. Paulus, 1990, IEEE International Digest on Microwave Symposium.

On Hall Scattering Factors for Holes in GaAs

C. E. Stutz, D. Look, J. Sizelove, 1996 .

Effects of strain and surface reconstruction on the kinetics of indium incorporation in MBE growth of InAs

C. E. Stutz, K. Evans, D. K. Lorance, 1989 .

AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio

Scott C. Dudley, Christopher A. Bozada, M. J. Paulus, 1987 .

Molecular beam epitaxial growth of high-quality GaN nanocolumns

C. E. Stutz, J. Boeckl, A. Davydov, 2006 .

Unpinning of GaAs surface Fermi level by 200 °C molecular beam epitaxial layer

David C. Look, C. E. Stutz, Keith R. Evans, 1990 .

Hydrogen incorporation, diffusivity and evolution in bulk ZnO

C. E. Stutz, D. Look, F. Ren, 2003 .

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

David C. Look, David P. Norton, John M. Zavada, 2003 .

Analytical Two-Layer Hall Analysis - Application To Modulation-Doped Field-Effect Transistors

C. E. Stutz, D. Look, C. Bozada, 1993 .

Effects of a buffer layer on free-carrier depletion in n-type GaAs

David C. Look, C. E. Stutz, Keith R. Evans, 1991 .

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

Nelson Tansu, James S. Speck, Nils C. Fernelius, 2009 .

Surface charge accumulation of InN films grown by molecular-beam epitaxy

Lester F. Eastman, Hai Lu, William J. Schaff, 2003 .

Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure

Qianghua Xie, C. E. Stutz, J. E. Nostrand, 1999 .

Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an EL 2-like defect

David C. Look, M. O. Manasreh, C. E. Stutz, 1990 .

A high-gain (Ga,Al)As/GaAs heterostructure bipolar transistor with an equilibrium-depleted spike-doped base

C. E. Stutz, K. Evans, K. Ikossi-Anastasiou, 1989, IEEE Electron Device Letters.

Annealing dynamics of molecular-beam epitaxial GaAs grown at 200°C

D. C. Walters, C. E. Stutz, D. Look, 1993 .

Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions

C. E. Stutz, K. Evans, Z. C. Huang, 1993 .

Energy and Depth Distributions of Interface States and bulk Traps and their Electronic Effects in GalnAs/GaAs Heterojuntions

C. E. Stutz, K. Evans, Z. C. Huang, 1991 .

Native donors and acceptors in molecular‐beam epitaxial GaAs grown at 200 °C

D. C. Walters, C. E. Stutz, D. Look, 1992 .

Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/ Al x Ga 1 − x Sb quantum wells

C. E. Stutz, B. McCombe, W. Mitchel, 1997 .

Dislocation-independent Mobility in Lattice-Mismatched Epitaxy: Application To GaN

C. E. Stutz, D. Look, Z. Liliental-Weber, 2001 .

Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

C. E. Stutz, P. W. Yu, 1993 .

Intersubband Infrared Absorption in a GaAs/Al0.3Ga0.7As Multiple Quantum Well

M. O. Manasreh, D. W. Fischer, C. E. Stutz, 1992 .

Sharp‐line photoluminescence of GaAs grown by low‐temperature molecular beam epitaxy

D. C. Reynolds, C. E. Stutz, P. W. Yu, 1992 .

HIGH-FIELD MAGNETO-SPECTROSCOPY OF QUASI-2D ELECTRONS AND HOLES IN INAS/ALXGA1-XSB SINGLE QUANTUM WELLS

C. E. Stutz, B. McCombe, W. Mitchel, 1998 .

Magneto‐Hall characterization of delta‐doped pseudomorphic high electron mobility transistor structures

C. E. Stutz, T. Rogers, D. Look, 1994 .

Characterization of an Asymmetric Triangular Multiple Quantum Well, by Variable Angle Spectroscopic Ellipsometry

D. C. Reynolds, P. G. Snyder, C. E. Stutz, 1989 .

Electrical and structural study of partially relaxed Ga0.92In0.08As(p+)/ GaAs(n) diodes

C. E. Stutz, K. Evans, C. Wie, 1990 .

Heterojuncion Study of Ga0.92In08as(P+)/GaAs(n) Diodes: Correlation of Electrical and Strucrural Characteristics

C. E. Stutz, K. Evans, C. Wie, 1989 .

Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells

D. C. Reynolds, G. D. Sanders, C. E. Stutz, 1989 .

Surface and interface free‐carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge

C. E. Stutz, D. Look, K. Evans, 1990 .

Electrochemical schottky characteristics of ZnO for capacitance-voltage measurements

C. E. Stutz, 2001 .

Photoelectrochemical Capacitance-Voltage Measurements in GaN

C. E. Stutz, D. Look, R. Davis, 1998 .

Infrared studies of be-doped GaAs grown by molecular beam epitaxy at low temperatures

M. O. Manasreh, C. E. Stutz, K. Evans, 1993 .

Stress and Stability of Sputter Deposited A-15 and BCC Crystal Structure Tungsten Thin Films

C. E. Stutz, M. O’Keefe, 1997 .

Photoluminescence excitation of the AsiVGa 0.8 eV emission in GaAs grown by molecular beam epitaxy at low temperatures

C. E. Stutz, P. W. Yu, 1994 .

Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400 °C

C. E. Stutz, D. Look, J. Sizelove, 1993 .

Effects of heat treatment on sharp‐line photoluminescence of GaAs grown by low‐temperature molecular beam epitaxy

C. E. Stutz, D. Talwar, P. W. Yu, 1993 .

Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs

M. O. Manasreh, C. E. Stutz, K. Evans, 1992, Proceedings of the 7th Conference on Semi-insulating III-V Materials,.

Photoreflectance and X-Ray Photoelectron Spectroscopy in Lt MBE GaAs

C. E. Stutz, D. Look, K. Evans, 1991 .

Electron Paramagnetic Resonance Study of Low Temperature Molecular Beam Epitaxy Grown GaAs and InP Layers

J. C. Garcia, M. O. Manasreh, C. E. Stutz, 1991 .

Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs

M. O. Manasreh, C. E. Stutz, D. Look, 1991 .

Double heterojunction bipolar transistor in AlxGa1−xAs/GaAs1−ySby system

C. E. Stutz, K. Evans, K. Ikossi-Anastasiou, 1991 .

Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure

M. O. Manasreh, D. W. Fischer, C. E. Stutz, 1990 .

Temperature Dependence of the Linewidth and Peak Position of the Intersubband Infrared Absorption in GaAs/Al 0.3 Ga 0.7 As Quantum Wells

M. O. Manasreh, D. W. Fischer, C. E. Stutz, 1990 .

Saturation spectroscopy of electronic states in a magnetic field in InAs/AlxGa1−xSb single quantum wells

S. J. Allen, C. E. Stutz, B. McCombe, 1998 .

Optical absorption of the intersubband transitions in GaAs/Al0.4Ga0.6As multiple quantum wells with superlattice barriers

D. C. Reynolds, M. O. Manasreh, C. E. Stutz, 1993 .

Resonant coupling of orbital angular momentum components in the barrier with analogous components in the well in InxGa1−xAs‐GaAs quantum wells

D. C. Reynolds, C. E. Stutz, K. Evans, 1994 .

Cation incorporation rate limitations in molecular-beam epitaxy - Effects of strain and surface composition

C. E. Stutz, K. Evans, D. K. Lorance, 1989 .

High valence‐band offset of GaSbAs‐InAlAs quantum wells grown by molecular beam epitaxy

D. C. Reynolds, C. E. Stutz, B. Jogai, 1992 .

Effective mass of the 2-dimensional electron gas in an Al0.6Ga0.4Sb/InAs single quantum well

M. O. Manasreh, C. E. Stutz, K. Evans, 1992 .

Spin-Splitting and Effective Mass of the 2-Dimensional Electron Gas in an Al 0.6 Ga 0.4 Sb/InAs Single Quantum Well

M. O. Manasreh, C. E. Stutz, K. Evans, 1991 .

Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material

C. E. Stutz, T. Rogers, D. Look, 1994 .

Photoluminescence study of symmetric, coupled, double InxGa1-xAs-GaAs quantum well structures

D. C. Reynolds, C. E. Stutz, K. Evans, 1993 .

Molecular‐beam epitaxial growth and characterization of erbium‐doped GaAs and AlGaAs

C. E. Stutz, K. Evans, J. Solomon, 1992 .

Incorporation/desorption rate variation at heterointerfaces in III–V molecular‐beam epitaxy

C. E. Stutz, K. Evans, J. Ehret, 1991 .

Photoluminescence of Mg‐ion implantation in low‐temperature grown GaAs

C. E. Stutz, M. Yen, P. W. Yu, 1994 .

Characterization of MBE GaAs Layers Grown at 200°C–300°C

C. E. Stutz, D. Look, K. Evans, 1990 .

Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures

C. E. Stutz, D. Look, J. Sizelove, 1994 .

Diamagnetic shifts of excitons associated with symmetric and antisymmetric wave functions in coupled InxGa1−xAs‐GaAs quantum wells

D. C. Reynolds, C. E. Stutz, D. Look, 1994 .

Incorporation of Silicon and Aluminum in Low-Temperature Molecular-Beam Epitaxial GaAs

M. O. Manasreh, C. E. Stutz, D. Look, 1992 .

Saturation spectroscopy and electronic-state lifetimes in a magnetic field in I n A s / A l x Ga 1 − x Sb single quantum wells

S. J. Allen, C. E. Stutz, J. Kono, 1998 .

Effect of radial growth rate variation on resonant tunneling diode current-Voltage characteristics

D. C. Reynolds, C. E. Stutz, C. Huang, 1991 .

Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200 °C

D. C. Walters, C. E. Stutz, D. Look, 1992 .

Electrical properties of molecular beam epitaxial GaAs grown at 300–450°C

C. E. Stutz, D. Look, J. Sizelove, 1993 .

p-HFETs with GaAsSb channel

C. E. Stutz, K. Evans, F. Schuermeyer, 1989, Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,.

Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells

M. O. Manasreh, C. E. Stutz, K. Evans, 1992 .

The Negative Persistent Photoconductivity in the Deep Quantum Wells

C. E. Stutz, M. Yen, I. Lo, 1992 .

Effect of Al Composition on the Deep Level Donors of Al x Ga 1-x Sb/lnAs Single Quantum Wells

M. O. Manasreh, C. E. Stutz, K. Evans, 1992 .

Shubnikov-De Haas Studies of Negative Persistent Photoconductivity in AlGaSb/InAs/AlGaSb Quantum Wells

M. O. Manasreh, C. E. Stutz, K. Evans, 1991 .

Effects of a low-doped spacer layer in the emitter of a resonant tunneling diode

C. E. Stutz, C. Huang, K. Evans, 1990 .

Photoreflectance and the electric fields in a GaAs depletion region

M. O. Manasreh, C. E. Stutz, K. Evans, 1990 .

Intersubband Transitions in In 0.07 Ga 0.93 As/Al 0.4 Ga 0.6 As Multiple Quantum Wells

M. O. Manasreh, C. E. Stutz, F. Szmulowicz, 1994 .

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band.

Evans, Walters, M. O. Manasreh, 1990, Physical review. B, Condensed matter.

Moving photoluminescence bands in GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates

M. O. Manasreh, C. E. Stutz, M. Capano, 1994 .

Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells.

Evans, Vaughan, Fischer, 1991, Physical review. B, Condensed matter.

Alloy scattering in p‐type AlxGa1−xAs

C. E. Stutz, D. Look, J. Sizelove, 1992 .

Quantum-well doped p-channel AlGaAs/GaAs/sub 0.85/Sb/sub 0.15//GaAs heterostructure field-effect transistors

C. E. Stutz, M. Shur, K. Evans, 1991 .

A study of the transition from high to low resistivity in As-grown GaAs MBE material

C. E. Stutz, D. Look, J. Sizelove, 1995 .

Emitter structure influence on the electron transport mechanism in resonant tunneling diodes

C. E. Stutz, K. Evans, B. Jogai, 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.