Keith R. Evans

发表

Optimization of the QWITT diode using equivalent circuit models

D. W. Whitson, R. Neidhard, M. J. Paulus, 1990, IEEE International Digest on Microwave Symposium.

Unpinning of GaAs surface Fermi level by 200 °C molecular beam epitaxial layer

David C. Look, C. E. Stutz, Keith R. Evans, 1990 .

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, V. Avrutin, 2010 .

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Edward A. Preble, Tanja Paskova, Eduard Hulicius, 2012 .

Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics

Edward A. Preble, Mark Johnson, Minseo Park, 2009 .

Deep centers in semi‐insulating Fe‐doped native GaN substrates grown by hydride vapour phase epitaxy

Drew Hanser, David C. Look, Z-Q. Fang, 2008 .

Effects of a buffer layer on free-carrier depletion in n-type GaAs

David C. Look, C. E. Stutz, Keith R. Evans, 1991 .

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates

Fang Liu, Robert F. Davis, Edward A. Preble, 2014 .

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Robert Bass, David J. Meyer, David F. Storm, 2014 .

AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio

Scott C. Dudley, Christopher A. Bozada, M. J. Paulus, 1987 .

Sb-surface segregation and the control of compositional abruptness at the interface

Ron Kaspi, Keith R. Evans, K. Evans, 1997 .

Fabrication and characterization of native non-polar GaN substrates

K. Udwary, Edward A. Preble, Tanja Paskova, 2008 .

Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates

Edward A. Preble, Russell D. Dupuis, Fernando Ponce, 2008 .

Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN

Paul H. Holloway, S. J. Pearton, R. F. Karlicek, 1996 .

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

C. L. Reynolds, Edward A. Preble, Mark Johnson, 2010 .

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, Ü. Özgür, 2009 .

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an EL 2-like defect

David C. Look, M. O. Manasreh, C. E. Stutz, 1990 .

Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Lin Zhou, Edward A. Preble, David J. Smith, 2007 .

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Hadis Morkoç, Xiang Li, Ümit Özgür, 2013 .

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

Mark Johnson, K. Udwary, Edward A. Preble, 2009 .

The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

Fang Liu, Robert F. Davis, Edward A. Preble, 2012 .

Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Edward A. Preble, Jung-Hyun Park, Minseo Park, 2008 .

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

Michael Wraback, Edward A. Preble, Shyh-Chiang Shen, 2006 .

AlGaN/GaN HEMTs on free-standing GaN substrates : MBE growth and microwave characterization

Edward A. Preble, Robert Bass, J. A. Roussos, 2007 .