Hirobumi Kawashima

Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State (Special Issue on TCAD for Semiconductor Industries)

Hirobumi Kawashima, Ryo Dang, 1999 .

Simulation technique of heating by contact resistance for ESD protection device

Kazuya Matsuzawa, Hirobumi Kawashima, T. Matsuhashi, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Design of ESD protection device using statistical methods

Naoyuki Shigyo, Hirobumi Kawashima, Seiji Yasuda, 2002, Proceedings International Symposium on Quality Electronic Design.

Simulation of gate switching characteristics of a miniaturized MOSFET based on a non-isothermal non-equilibrium transport model

Hirobumi Kawashima, Ryo Dang, Won-Cheol Choi, 1997, Proceedings of ASP-DAC '97: Asia and South Pacific Design Automation Conference.