Ryo Dang

发表

Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State (Special Issue on TCAD for Semiconductor Industries)

Hirobumi Kawashima, Ryo Dang, 1999 .

A SWITCHBOX ROUTER USING NEURAL NETWORK

Ryo Dang, Yi Xing Wang, 1992 .

Simulation of gate switching characteristics of a miniaturized MOSFET based on a non-isothermal non-equilibrium transport model

Hirobumi Kawashima, Ryo Dang, Won-Cheol Choi, 1997, Proceedings of ASP-DAC '97: Asia and South Pacific Design Automation Conference.

A Composite Two-Dimensional Process/Device Simulation System (TOPMODE) and its Application for Total Process Designing in Submicron VLSI MOS Device Phase

Ryo Dang, Shinji Onga, Masami Konaka, 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.