Yuuichi Kamimuta

Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI

Kiwamu Sakuma, Shosuke Fujii, Marina Yamaguchi, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory

Shosuke Fujii, Reika Ichihara, Marina Yamaguchi, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property

Shosuke Fujii, Masumi Saitoh, Yasushi Nakasaki, 2016, 2016 IEEE Symposium on VLSI Technology.

Direct Comparison of ZrO2 and HfO2 on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks

Akira Nishiyama, Yuuichi Kamimuta, Tsunehiro Ino, 2005 .

Carrier transport analysis of high-performance poly-Si Nanowire transistor fabricated by advanced SPC with record-high electron mobility

Kiwamu Sakuma, Masumi Saitoh, Minoru Oda, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Superior cut-off characteristics of Lg=40nm Wfin=7nm poly Ge junctionless Tri-gate FET for stacked 3D circuits integration

Masahiro Koike, Keiji Ikeda, Minoru Oda, 2013, 2013 Symposium on VLSI Technology.

Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy

Yoshitaka Tsunashima, Masamichi Suzuki, Masato Koyama, 2005 .

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

A. Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .