Ahm Arno Smets

发表

High rate a-Si:H growth studied by in situ ellipsometry

Dc Daan Schram, van de Mcm Richard Sanden, Wmm Erwin Kessels, 1999 .

High-rate deposition of microcrystalline silicon p-i-n solar cells in the high pressure depletion regime

Michio Kondo, Ahm Arno Smets, Takuya Matsui, 2008 .

Highly Efficient Hybrid Polymer and Amorphous Silicon Multijunction Solar Cells with Effective Optical Management

Mm Martijn Wienk, Miro Zeman, Weiwei Li, 2016, Advanced materials.

On the growth mechanism of a-Si:H

Ahm Arno Smets, E. Aydil, W. Kessels, 2001 .

Vacancies and voids in hydrogenated amorphous silicon

Ahm Arno Smets, W. Kessels, Van de Sanden, 2003 .

Bulk and surface defects in a-Si:H films studied by means of the cavity ring down absorption technique

Ahm Arno Smets, Van de Sanden, V. P. Helden, 2002 .

Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

Jpm Johan Hoefnagels, Ahm Arno Smets, W. Kessels, 2000 .

Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

Ahm Arno Smets, Van de Sanden, D. Schram, 2000 .

Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H2-SiH4 plasma

Ba Bas Korevaar, Rj René Severens, Ahm Arno Smets, 2001 .

The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley–Rideal mechanism

Ahm Arno Smets, W. Kessels, Van de Sanden, 2004 .

The role of H in the growth mechanism of PECVD a-Si:H

Ba Bas Korevaar, Rj René Severens, Ahm Arno Smets, 1999 .

Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment

Ahm Arno Smets, Van de Sanden, 2007 .

High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application

Ba Bas Korevaar, Ahm Arno Smets, W. Kessels, 2000 .

Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C:H

de A Ariël Graaf, Ahm Arno Smets, Van de Sanden, 1999 .

Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

Jpm Johan Hoefnagels, Ahm Arno Smets, W. Kessels, 2001 .

The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition

Ahm Arno Smets, W. Kessels, Van de Sanden, 2007 .

External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique

Ahm Arno Smets, W. Kessels, Van de Sanden, 2004 .

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Ahm Arno Smets, W. Kessels, Van de Sanden, 2003 .

In situ ellipsometric studies of the a-Si:H growth using an expanding thermal plasma

Ahm Arno Smets, Van de Sanden, D. Schram, 1999 .

Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth

Ahm Arno Smets, W. Kessels, Van de Sanden, 2005 .

In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma

Ahm Arno Smets, Van de Sanden, D. Schram, 2000 .

The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma

Ahm Arno Smets, M. Kondo, 2006 .

The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

Ahm Arno Smets, M. Zeman, C. Wronski, 2010 .

Infrared analysis of the bulk silicon-hydrogen bonds as an optimization tool for high-rate deposition of microcrystalline silicon solar cells

Ahm Arno Smets, M. Kondo, T. Matsui, 2008 .