C. Wyon

11. CONCLUSIONS - RECOMMENDATIONS - FUTURE STRATEGIES AND ACTION PLAN

M. Lacroix, J. Daillant, I. Nenner, 2011 .

X-ray metrology for advanced microelectronics

C. Wyon, C. Wyon, 2010 .

Room-temperature CW laser operation at /spl sim/1.55 /spl mu/m (eye-safe range) of Yb:Er and Yb:Er:Ce:Ca/sub 2/Al/sub 2/SiO/sub 7/ crystals

C. Borel, Daniel Vivien, Bruno Viana, 1996 .

In-line monitoring of advanced microelectronic processes using combined X-ray techniques

D. Delille, A. Michallet, C. Wyon, 2004 .

How effective are failure analysis methods for the 65nm CMOS technology node?

F. Lorut, C. Wyon, M. Lamy, 2005, Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..

Ultra Low‐κ Metrology Using X‐Ray Reflectivity And Small‐Angle X‐Ray Scattering Techniques

A. Peled, B. Yokhin, C. Wyon, 2007 .

Growth by LPE of Nd: YAG single crystal layers for waveguide laser applications

Isabelle Chartier, Denis Pelenc, C. Wyon, 1993 .

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Thierry Baron, C. Busseret, Abdelkader Souifi, 2000 .

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

Thierry Baron, François Martin, P. Mur, 2000 .

Room‐temperature diode‐pumped continuous‐wave SrY4(SiO4)3O: Yb3+, Er3+ crystal laser at 1554 nm

C. Borel, R. Romero, Richard Moncorge, 1994 .