倪金玉

基于p-GaN结构的GaN HEMT功率电子器件和数字电路单片集成技术

倪金玉, 孔岑, 周建军, 2019 .

High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

倪金玉, 马晓华, 郝跃, 2009 .

Comparative study of different properties of GaN films grown on (0001) sapphire using high and low temperature AlN interlayers

倪金玉, 郝跃, 张进成, 2010 .

Hot-carrier degradation for 90 nm gate length LDD- NMOSFET with ultra-thin gate oxide under low gate voltage stress

李康, 倪金玉, 陈海峰, 2007 .