V. A. Burdov

发表

About the phosphorus sensitization of silicon quantum dots in SiO2 photoluminescence

A. N. Mikhaylov, D. I. Tetelbaum, V. A. Burdov, 2003, Saratov Fall Meeting.

Silicon Nanocrystals: Fundamental Theory and Implications for Stimulated Emission

R. Lockwood, V. A. Belyakov, V. A. Burdov, 2008 .

Photoluminescence in dense arrays of silicon nanocrystals: the role of the concentration and average size

V. A. Burdov, A. Konakov, V. Belyakov, 2013 .

Tunnel migration in ensembles of silicon nanocrystals doped with phosphorus

V. A. Burdov, A. Konakov, V. Belyakov, 2010 .

Nonradiative relaxation in ensembles of silicon nanocrystals

V. A. Burdov, V. Belyakov, 2010 .

Electron tunneling in ensembles of silicon nanocrystals

V. A. Burdov, A. Meldrum, R. Lockwood, 2010 .

Computational simulations for ensembles of luminescent silicon nanocrystals: Implications for optical gain and stimulated emission

V. A. Burdov, A. Meldrum, R. Lockwood, 2009 .

Lande factor of the conduction electrons in silicon: temperature dependence

V. A. Burdov, A. Konakov, D. Guseinov, 2011 .

Impact of dangling bonds on the surface of silicon nanocrystals doped with shallow donors upon radiative interband transitions

V. A. Burdov, A. Konakov, K. V. Sidorenko, 2011 .

Γ−Xmixing in phosphorus-doped silicon nanocrystals: Improvement of photon generation efficiency

V. A. Burdov, V. Belyakov, V. Burdov, 2009 .

The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system

D. M. Gaponova, V. A. Burdov, S. Morozov, 2004 .

The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions

D. M. Gaponova, V. A. Burdov, D. Revin, 2001 .

Effect of surface defects on radiative interband recombination in silicon nanocrystals highly doped with hydrogen-like impurities

V. A. Burdov, K. V. Sidorenko, V. Belyakov, 2010 .

Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ–X mixing of the confined electron states

V. A. Burdov, D. Tetelbaum, A. Mikhaylov, 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

Effect of spin-orbit coupling on the structure of the electron ground state in silicon nanocrystals

V. A. Burdov, A. Konakov, N. Kurova, 2013 .

Universality of the Förster's model for resonant exciton transfer in ensembles of nanocrystals.

V. A. Burdov, G. Maksimova, 2022, The Journal of chemical physics.

Influence of the dielectric matrix on photoluminescence and energy exchange in ensembles of silicon nanocrystals

V. A. Burdov, A. Konakov, K. V. Sidorenko, 2012, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Intensification of Förster transitions between Si crystallites due to their doping with phosphorus

V. A. Burdov, V. Belyakov, V. Burdov, 2013 .

Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)

V. A. Burdov, N. Kurova, 2013 .

Massive Dirac fermions in one-dimensional inhomogeneous nanorings

V. A. Burdov, G. Maksimova, E. Azarova, 2019, Physica E: Low-dimensional Systems and Nanostructures.

Radiative Recombination and Migration Effects in Ensembles of Si Nanocrystals: Towards Controllable Nonradiative Energy Transfer

V. A. Burdov, V. Belyakov, 2011 .

Size Dependence Of The Optical Gap In Silicon Nanocrystals Embedded Into a-Si:H Matrix

M. F. Cerqueira, V. A. Burdov, M. Vasilevskiy, 2005 .

Two-electron states in a double quantum dot in a constant electric field

V. A. Burdov, 2001 .

The Luminescent Properties of Ion-Implantation-Fabricated SiO 2 :nc-Si Nanostructures Annealed at High Temperatures

D. M. Gaponova, V. A. Burdov, A. P. Kasatkin, 2003 .

Phonon-assisted radiative electron-hole recombination in silicon quantum dots

D. M. Gaponova, V. A. Burdov, S. Trushin, 2004 .

Phosphorus doping as an efficient way to modify the radiative interband recombination in silicon nanocrystals

V. A. Burdov, D. Tetelbaum, A. Mikhaĭlov, 2009 .

The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO2:nc-Si

D. M. Gaponova, V. A. Burdov, D. Revin, 2001 .

Recombination, multiplication, and transfer of electron-hole pairs in silicon nanocrystals: Effects of quantum confinement, doping, and surface chemistry

V. A. Burdov, A. Konakov, N. Derbenyova, 2021 .

Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

V. A. Burdov, M. Vasilevskiy, 2021, Applied Sciences.

Antipolarization effect in quantum wells in a strong external alternating field

V. A. Burdov, 1999 .

Electron polarization in quantum wells in a strong variable field

V. A. Burdov, 1999 .

Dynamical control of electron states in double quantum dot

V. A. Burdov, D. Solenov, 2004 .

Electronic spectrum and wave functions in a double quantum well in a nonharmonic field

V. A. Burdov, 2000 .

Electron resonance dynamics in a double quantum well

V. A. Burdov, 1999 .

Formation of gold nanoparticles in single-layer and multi-layer ensembles of light-emitting silicon nanocrystals using ion implantation

V. A. Burdov, D. Korolev, D. Tetelbaum, 2012 .

Resonance structure of the rate of Auger recombination in silicon nanocrystals

V. A. Burdov, N. V. Kurova, V. Burdov, 2010 .

Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors

V. A. Burdov, V. Belyakov, V. Burdov, 2008 .

Optical gap of P-doped Si nanocrystals

V. A. Burdov, A. Konakov, V. Belyakov, 2012, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals

V. A. Burdov, A. Konakov, V. Belyakov, 2010 .

Valley-orbit splitting in doped nanocrystalline silicon : K.p calculations

V. A. Burdov, V. Belyakov, 2007 .

Chemical-shift enhancement for strongly confined electrons in silicon nanocrystals

V. A. Burdov, V. Belyakov, V. Burdov, 2007 .

Electron and hole spectra of silicon quantum dots

V. A. Burdov, 2002 .

Crossing Effects in Resonant Magnetotransport Through Quantum Dot Arrays

V. A. Burdov, N. Mikhaylova, 2007 .

On the effect of structural and symmetrical features of potassium titanyl phosphate crystals with different contents of niobium, antimony, and zirconium on the second-harmonic intensity

E. V. Chuprunov, V. A. Burdov, M. O. Marychev, 2008 .

Optical gap of silicon crystallites embedded in various wide-band amorphous matrices: role of environment

V. A. Burdov, A. Konakov, 2010, Journal of physics. Condensed matter : an Institute of Physics journal.

Structure of the ground state of electrons and holes in a silicon quantum dot with a shallow donor

V. A. Burdov, V. Belyakov, V. Burdov, 2007 .

Dependence of the optical gap of Si quantum dots on the dot size

V. A. Burdov, V. Burdov, 2002 .

Radiative decay rates in Si crystallites with a donor ion

V. A. Burdov, N. Derbenyova, 2018 .

Multi-carrier processes in halogenated Si nanocrystals.

V. A. Burdov, N. Derbenyova, 2020, The Journal of chemical physics.

Resonant tunneling of carriers in silicon nanocrystals

V. A. Burdov, A. Konakov, N. Derbenyova, 2016 .