Nelson S. Saks

发表

Characteristics of oxynitrides grown in N2O

Daniel M. Fleetwood, David I. Ma, Mark E. Twigg, 1994 .

CCD's for High Resolution Imaging in the Near and Far UV

Martin C. Peckerar, J. T. Bosiers, D. J. Michels, 1986, Optics & Photonics.

Anant K. Agarwal, Sei-Hyung Ryu, John W. Palmour, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

Anant K. Agarwal, Nelson S. Saks, A. Agarwal, 2000 .

Characterization of individual interface traps with charge pumping

Guido Groeseneken, Nelson S. Saks, G. Groeseneken, 1996 .

Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Mario G. Ancona, Ronald W. Rendell, Nelson S. Saks, 2002 .

Numerical simulation of 3‐level charge pumping

Mario G. Ancona, Nelson S. Saks, 1992 .

The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides (n-MOSFET)

Nelson S. Saks, N. Saks, R. Rendell, 1992 .

Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

Mario G. Ancona, J. A. Modolo, John A. Modolo, 1986, IEEE Transactions on Nuclear Science.

Effects of switched gate bias on radiation-induced interface trap formation (MOS transistors)

Dennis B. Brown, Nelson S. Saks, N. Saks, 1991 .

Symposium K: Silicon Carbide - Materials, Processing, and Devices

Stephen E. Saddow, Nelson S. Saks, David J. Larkin, 2002 .

A time domain analysis of the charge pumping current

Gerard Ghibaudo, Nelson S. Saks, G. Ghibaudo, 1988 .

Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides

Daniel M. Fleetwood, Nelson S. Saks, D. Fleetwood, 1996 .

Nature of Radiation-Induced Point Defects in Amorphous SiO2 and their Role in SiO2-ON-Si Structures

D. B. Brown, D. L. Griscom, Nelson S. Saks, 1988 .

A New Technique for Hardening CCD Imagers by Suppression of Interface State Generation

Nelson S. Saks, N. Saks, 1980, IEEE Transactions on Nuclear Science.

Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

Anant K. Agarwal, Nelson S. Saks, A. Agarwal, 2000 .

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

John W. Palmour, Mrinal K. Das, Nelson S. Saks, 2002 .

Time dependence of interface trap formation in MOSFETs following pulsed irradiation

Dennis B. Brown, Nelson S. Saks, C. Dozier, 1988 .

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2002 .

Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field

Dennis B. Brown, Nelson S. Saks, N. Saks, 1991 .

Formation of interface traps in MOSFETs during annealing following low temperature irradiation

David L. Griscom, Nelson S. Saks, D. Griscom, 1988 .

Spatial uniformity of interface trap distribution in MOSFETs

M. G. Ancona, Nelson S. Saks, M. Ancona, 1990 .

Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs

Anant K. Agarwal, Nelson S. Saks, A. Agarwal, 2000 .

Investigation of the charge pumping current in metal‐oxide‐semiconductor structures

Gerard Ghibaudo, Nelson S. Saks, G. Ghibaudo, 1989 .

Nitrogen depletion during oxidation in N2O

Nelson S. Saks, W. Fowler, N. Saks, 1995 .

Effects of post-stress hydrogen annealing on MOS oxides after /sup 60/Co irradiation or Fowler-Nordheim injection

B. J. Mrstik, Robert E. Stahlbush, Ronald W. Rendell, 1993 .