N. Moumen

High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond

C. Pacha, M. Sherony, A. Steegen, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Mobility enhancement of high-k gate stacks through reduced transient charging

Q. Wang, G. Bersuker, B.H. Lee, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO/sub 2/ gate dielectric

B.H. Lee, P. Majhi, M.S. Akbar, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs

P. Majhi, C. Huffman, N. Moumen, 2006, IEEE Transactions on Electron Devices.

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

G. Bersuker, M. Gardner, P. Zeitzoff, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate

E. Luckowski, H. Bu, V. Narayanan, 2008, 2008 IEEE International Electron Devices Meeting.