Motoaki Iwaya

发表

Fabrication of UV devices on various plane substrates

Motoaki Iwaya, Takeshi Kawashima, Kazuyoshi Iida, 2005, SPIE OPTO.

Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy

Hiroshi Amano, Motoaki Iwaya, Satoshi Kamiyama, 2008, SPIE OPTO.

Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes

Toshiyuki Sato, Motoaki Iwaya, Satoshi Kamiyama, 2000 .

Physics and simulation of group-III-nitride-based moth-eye LEDs

Takeshi Kawashima, Hiroshi Amano, Motoaki Iwaya, 2005, SPIE OPTO.

Transverse-mode control in GaN-based laser diodes

Toshiyuki Sato, Theeradetch Detchprohm, Motoaki Iwaya, 2001, SPIE OPTO.

Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, 2007, SPIE OPTO.

Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT

Takeshi Kawashima, Motoaki Iwaya, Akira Honshio, 2006, IEICE Trans. Electron..

Formation and characterization of porous SiC by anodic oxidation using potassium persulfate solution

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2018, Micro + Nano Materials, Devices, and Applications.

Comparison of the simulation and experiments of the nitride-based UV light emitting diodes

Motoaki Iwaya, Kazuyoshi Iida, Krishnan Balakrishnan, 2007, SPIE OPTO.

Reduction in operating voltage of UV laser diode

Motoaki Iwaya, Isamu Akasaki, Harumasa Yoshida, 2010, OPTO.

Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2013, Photonics West - Optoelectronic Materials and Devices.

Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate

Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, 2009, OPTO.

Detailed feasibility study on a flame detector using AlGaN photosensors

Akira Hirano, Motoaki Iwaya, Isamu Akasaki, 2000, Photonics West - Optoelectronic Materials and Devices.

Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer

Kengo Yamamoto, Motoaki Iwaya, Satoshi Kamiyama, 2019, Applied Sciences.

Enhancement of light extraction efficiency of blue-light-emitting diodes by moth-eye structure

Motoaki Iwaya, Satoshi Kamiyama, Toshiyuki Kondo, 2010, OPTO.

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, 2003, Saratov Fall Meeting.

Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices

Takahiro Fujii, Motoaki Iwaya, Satoshi Kamiyama, 2012, OPTO.

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, 2010, OPTO.

Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes

Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, 2009, OPTO.

Introduction of the moth-eye patterned sapphire substrate technology for cost-effective high-performance LEDs

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2013, Photonics West - Optoelectronic Materials and Devices.

Fabrication and characterization of nitride-based blue light-emitting diodes on moth-eye patterned sapphire substrate (MPSS)

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2013, Photonics West - Optoelectronic Materials and Devices.

Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display

Motoaki Iwaya, Takeshi Kawashima, Kazuyoshi Iida, 2003, SPIE OPTO.

Fabrication of high-efficiency LED using moth-eye structure

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011, OPTO.

Homoepitaxial growth of AlN layers using by metalorganic vapor phase epitaxy on freestanding AlN substrate

Motoaki Iwaya, Isamu Akasaki, Satoshi Kamiyama, 2014, Photonics West - Optoelectronic Materials and Devices.

High-concentration doping of donor and acceptor in fluorescent 4H-SiC by closed sublimation growth

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2021, OPTO.

Device fabrication for multiple quantum shell nanowires based laser diodes

Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, 2021, OPTO.

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2008 .

Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

GaInN‐based solar cells using GaInN/GaInN superlattices

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

GaN-based vertical cavity surface emitting lasers with periodic gain structures

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2016 .

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Kazuyoshi Iida, Masataka Imura, Motoaki Iwaya, 2006 .

Fluorescent SiC and its application to white light-emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2013 .

Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

Realization of extreme light extraction efficiency for moth‐eye LEDs on SiC substrate using high‐reflection electrode

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN

Motoaki Iwaya, Fernando Ponce, Daisuke Iida, 2009 .

Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer

Motoaki Iwaya, Isamu Akasaki, Nobuaki Hayashi, 2000 .

Improvement of light extraction efficiency of 350‐nm emission UV light‐emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2014 .

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2016, 2016 International Semiconductor Laser Conference (ISLC).

Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Control of stress and crystalline quality in GaInN films used for green emitters

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2008 .

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, 2008 .

Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

Theeradetch Detchprohm, Motoaki Iwaya, Isamu Akasaki, 2000 .

White light-emitting diode based on fluorescent SiC

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2012 .

High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2001 .

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, 2007 .

Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode

Theeradetch Detchprohm, Motoaki Iwaya, Isamu Akasaki, 2001 .

GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB 2 ,(30 3 8) 4H-SiC and r -faced Sapphire.

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2004 .

GaN growth on (30&3macr;8) 4H‐SiC substrate for reduction of internal polarization

Motoaki Iwaya, Akira Honshio, Satoshi Kamiyama, 2005 .

High efficiency violet to blue light emission in porous SiC produced by anodic method

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

The role of the multi buffer layer technique on the structural quality of GaN

Motoaki Iwaya, Isamu Akasaki, J. H. Mazur, 2000 .

High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2013 .

Frontispiece: Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes (Phys. Status Solidi A 7/2011)

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2002 .

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2019, Japanese Journal of Applied Physics.

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure

Kazuyoshi Iida, Motoaki Iwaya, Akira Honshio, 2005 .

Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2009 .

Low-Intensity Ultraviolet Photodetectors Based on AlGaN

Theeradetch Detchprohm, Motoaki Iwaya, Isamu Akasaki, 1999 .

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

Kazuki Mori, Motoaki Iwaya, Satoshi Kamiyama, 2016 .

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano, 1998 .

Novel UV devices on high-quality AlGaN using grooved underlying layer

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2009 .

350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Kazuyoshi Iida, Motoaki Iwaya, Akira Honshio, 2004 .

Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

One‐step lateral growth for reduction in defect density of a ‐plane GaN on r ‐sapphire substrate and its application in light emitters

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2002 .

High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2009 .

Violet and UV light‐emitting diodes grown on ZrB2 substrate

Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, 2003 .

Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2006 .

Laser lift-off of AlN/sapphire for UV light-emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2012 .