Yasuo Ohba

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Re: Anjyu: Copyright restrictions prevent ACM from providing the full text for this work.

Yasuo Ohba, 2004, SIGGRAPH '04.

Room temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Masayuki Ishikawa, Yasuo Ohba, M. Ishikawa, 1986 .

Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique

Miyoko O. Watanabe, Yasuo Ohba, Y. Ohba, 1987 .

InGaAlP Transverse Mode Stabilized Visible Laser Diodes Fabricated by MOCVD Selective Growth

Masayuki Ishikawa, Gen-ichi Hatakoshi, Yasuo Ohba, 1986 .

A study of p-type doping for AlGaInP grown by low-pressure MOCVD

Yukie Nishikawa, Yasuo Ohba, C. Nozaki, 1988 .

Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

Masayuki Ishikawa, Masahiro Yamamoto, Kazuhiko Itaya, 1996 .

Low current operation of GaN-based blue-violet laser diodes fabricated on sapphire substrate using high-temperature-grown single-crystal AlN buffer layer

Kei Kaneko, Yasuo Ohba, K. Kaneko, 2007 .

Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer

Kei Kaneko, Mitsuhiro Kushibe, Yasuo Ohba, 2008 .