W. McMahon

A probabilistic-physics-of-failure/short-time-test approach to reliability assurance for high-performance chips: models for deep-submicron transistors and optical interconnects

Jinju Lee, A. Haggag, Kangguo Cheng, 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

RTS Noise Characterization in Flash Cells

Yung-Huei Lee, Y.-L.R. Lu, Sing-Rong Li, 2008, IEEE Electron Device Letters.

The Role of Shallow Trench Isolation on Channel Width Noise Scaling for Narrow Width CMOS and Flash Cells

Yung-Huei Lee, Yu-Ching Liao, Y.-L.R. Lu, 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Shallow Trench Isolation Edge Effect on Random Telegraph Signal Noise and Implications for Flash Memory

Yung-Huei Lee, Yin-Lung Ryan Lu, A. Ghetti, 2009, IEEE Transactions on Electron Devices.

Voltage Ramp Stress for Hot-Carrier Screening of Scaled CMOS Devices

A. Kerber, W. McMahon, E. Cartier, 2012, IEEE Electron Device Letters.

Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process

Y. Liu, T. Nigam, S. Uppal, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

On the Scaling of Flash Cell Spacer for Gate Disturb and Charge Retention Optimization

Yung-Huei Lee, Y.-L.R. Lu, W. McMahon, 2009, IEEE Transactions on Electron Devices.