Seikoh Yoshida

发表

High Power AIGaN/GaN HFET

Seikoh Yoshida, 2003 .

Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

Jiang Li, Takahiro Wada, Hironari Takehara, 2004 .

Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure

Jiang Li, Takahiro Wada, Hironari Takehara, 2005, IEICE Trans. Electron..

Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature

Seikoh Yoshida, S. Yoshida, Joe Suzuki, 1998 .

Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application

Seikoh Yoshida, Nariaki Ikeda, Hiroshi Kambayashi, 2007 .

A High‐Power GaN‐Based Field‐Effect Transistor for Large‐Current Operation

Seikoh Yoshida, S. Yoshida, H. Ishii, 2001 .

AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation

Seikoh Yoshida, Hirotatsu Ishii, Jiang Li, 2002 .

Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

Seikoh Yoshida, Yuki Niiyama, Hiroshi Kambayashi, 2008 .

Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates

Seikoh Yoshida, Yuki Niiyama, Hiroshi Kambayashi, 2008 .

Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h

Seikoh Yoshida, S. Yoshida, Joe Suzuki, 1999 .

High‐quality SiO2/GaN interface for enhanced operation field‐effect transistor

Seikoh Yoshida, Yuki Niiyama, Hiroshi Kambayashi, 2007 .

A Fabrication of Very Low Contact Resistance AlGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy

Masakazu Ichikawa, Seikoh Yoshida, Deliang Wang, 2002 .

Formation of thin GaN layer on Si (1 1 1) for fabrication of high-temperature metal field effect transistors (MESFETs)

Hironari Takehara, Seikoh Yoshida, Takahiro Wada, 2003 .

Electrochemical etching of a conductive GaN crystal for patterning

Seikoh Yoshida, S. Yoshida, 1997 .

A high-power AlGaN/GaN heterojunction field-effect transistor

Masakazu Ichikawa, Seikoh Yoshida, Hirotatsu Ishii, 2003 .

288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs

Seikoh Yoshida, Nariaki Ikeda, Yuki Niiyama, 2008 .

Power factor correction circuit application using AlGaN/GaN HFETs

Seikoh Yoshida, Nariaki Ikeda, Yuki Niiyama, 2008 .

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

Seikoh Yoshida, Sadahiro Kato, Yoshihiro Satoh, 2007 .