D.J. Coleman

Edge-defined self-alignment of submicrometer overlaid devices

J.E. Leiss, P.K. Chatterjee, S.D.S. Malhi, 1984, IEEE Electron Device Letters.

Interface trap-enhanced gate-induced leakage current in MOSFET

C.W. Teng, D.J. Coleman, I. Chen, 1989, IEEE Electron Device Letters.

Scalability of a trench capacitor cell for 64 Mbit DRAM

C.W. Teng, D.J. Coleman, I. Chen, 1989, International Technical Digest on Electron Devices Meeting.

Gate current injection initiated by electron band-to-band tunneling in MOS devices

C.W. Teng, D.J. Coleman, I.-C. Chen, 1989, IEEE Electron Device Letters.