文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
Shalini Lal
发表
Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction
Steven P. DenBaars, Umesh K. Mishra, Jing Lu, 2019, 2019 Device Research Conference (DRC).