Philippe Lefaucheux

发表

Cryoetching mechanisms and STiGer process evaluation

Remi Dussart, Philippe Lefaucheux, Thomas Tillocher, 2016 .

Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Remi Dussart, Philippe Lefaucheux, Thomas Tillocher, 2014 .

Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing

F. Grangeon, Pierre Ranson, Philippe Lefaucheux, 2002 .

Profile control of high aspect ratio trenches of silicon. II. Study of the mechanisms responsible for local bowing formation and elimination of this effect

Pierre Ranson, Philippe Lefaucheux, M. Boufnichel, 2003 .

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Remi Dussart, Christophe Cardinaud, Pierre Ranson, 2009 .

SiOxFy passivation layer in silicon cryoetching

Remi Dussart, Lawrence J. Overzet, Pierre Ranson, 2005 .

Deep GaN etching by inductively coupled plasma and induced surface defects

Remi Dussart, Pierre Ranson, Philippe Lefaucheux, 2010 .

Silicon columnar microstructures induced by an SF6/O2 plasma

Remi Dussart, Pierre Ranson, X. Mellhaoui, 2005 .