Antoine D. Touboul

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors

Ronald D. Schrimpf, Daniel M. Fleetwood, R. Arinero, 2011, Microelectron. Reliab..

Evaluation of test algorithms stress effect on SRAMs under neutron radiation

Arnaud Virazel, Alberto Bosio, Luigi Dilillo, 2012, 2012 IEEE 18th International On-Line Testing Symposium (IOLTS).

Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET

Antoine D. Touboul, Frédéric Saigné, Jerome Boch, 2013, Microelectron. Reliab..

A calculation method to estimate single event upset cross section

Luigi Dilillo, Antoine D. Touboul, Frédéric Saigné, 2017, Microelectron. Reliab..

Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model

Antoine D. Touboul, Frédéric Saigné, Jerome Boch, 2013, Microelectron. Reliab..

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

J.-L. Autran, Antoine D. Touboul, Frédéric Saigné, 2018, Microelectron. Reliab..

On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum

Antoine D. Touboul, Frédéric Saigné, Frederic Wrobel, 2012, Microelectron. Reliab..

Soft Error Triggering Criterion Based on Simplified Electrical Model of the SRAM Cell

Luigi Dilillo, F. Saigne, Antoine D. Touboul, 2013, IEEE Transactions on Nuclear Science.

Neutrons-Induced IGBT Failure: Effects of the Number of Tested Devices on the Cross Section Calculation

Antoine D. Touboul, Frederic Wrobel, Frederic Saigne, 2013, IEEE Transactions on Nuclear Science.