Chenyue Ma

发表

Investigation of nitrogen enhanced NBTI effect using the universal prediction model

Peng Wu, Chenyue Ma, Lining Zhang, 2015, 2015 IEEE International Reliability Physics Symposium.

A universal approach for signal dependent circuit reliability simulation

Chenyue Ma, Lining Zhang, Mansun Chan, 2017, 2017 IEEE 12th International Conference on ASIC (ASICON).

A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection

Xing Zhang, Chenyue Ma, Lining Zhang, 2011, Microelectron. Reliab..

Comparison and improvement of two core compact models for double-gate MOSFETs

Xing Zhang, Chenyue Ma, Jian Zhang, 2010 .

Modeling nanoscale MOSFETs by a neural network approach

Jin He, Chenyue Ma, Mansun Chan, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

Mansun Chan, Chenyue Ma, Min Shi, 2011, IEEE Electron Device Letters.

Failure analysis of a PLL ESD structure design defect

Chenyue Ma, Xinnan Lin, Zhiwei Liu, 2017, 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Distributed attitude coordination control of multiple spacecraft systems based on state feedback and output feedback

Lei Chen, Chenyue Ma, Wenyu Li, 2016, 2016 Sixth International Conference on Information Science and Technology (ICIST).

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions

Hans Jürgen Mattausch, Chenyue Ma, Mitiko Miura-Mattausch, 2013, IEICE Trans. Electron..

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Jin He, Chenyue Ma, Lining Zhang, 2009 .

Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits

Hao Wang, Xing Zhang, Chenyue Ma, 2010, 2010 11th International Symposium on Quality Electronic Design (ISQED).

Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure

Feng Liu, Chenyue Ma, Lining Zhang, 2008, 9th International Symposium on Quality Electronic Design (isqed 2008).

Reliability-aware Device Compact Modeling and Implications On Circuit Aging Simulations

Chenyue Ma, Mansun Chan, Lining Zhang, 2016 .

The segmented SCRs with optimized holding voltage for on-chip ESD protection

Chenyue Ma, Xinnan Lin, Jizhi Liu, 2017, 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

Xinjie Guo, Chenyue Ma, Xinnan Lin, 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

FinFET: From compact modeling to circuit performance

Chenyue Ma, Wen Wu, Zhiwei Liu, 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

Concurrent device/circuit aging for general reliability simulations

Chenyue Ma, Lining Zhang, Mansun Chan, 2016, 2016 International Symposium on Integrated Circuits (ISIC).

A Dynamic Time Evolution Method for Concurrent Device-Circuit Aging Simulations

Mansun Chan, Chenyue Ma, Xinnan Lin, 2019, IEEE Transactions on Electron Devices.

Circuit-aging modeling based on dynamic MOSFET degradation and its verification

Chenyue Ma, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

Bo Li, Xing Zhang, Chenyue Ma, 2009, 2009 10th International Symposium on Quality Electronic Design.

An improved computationally efficient drain current model for double-gate MOSFETs

Chenyue Ma, Wei Zhao, Wen Wu, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device

Hao Wang, Xing Zhang, Chenyue Ma, 2010, Microelectron. Reliab..