D. Harame

发表

Alvin J. Joseph, Douglas Duane Coolbaugh, D. Harame, 2002 .

A 22nm FDSOI Technology Optimized for RF/mmWave Applications

J. Mazurier, D. Harame, J. Watts, 2018, 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

22nm FD-SOI Technology with Back-biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-low Power Analog and RF/Millimeter-Wave Designs

D. Harame, C.K. Lim, W.H. Chow, 2019, 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration

K. Chatty, D. Harame, E. Seebacher, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters

D. Harame, R. Camillo-Castillo, V. Jain, 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulation

J. Mazurier, J. Lacord, D. Harame, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

An implantable ion sensor transducer

D. Harame, J. Shott, J. Plummer, 1981, 1981 International Electron Devices Meeting.

High-performance silicon-germanium technology

D. Harame, G. Freeman, S. Subbanna, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

An X-band monolithic active mixer in SiGe HBT technology

L. Larson, D. Harame, M. Case, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process

D. Harame, J. Malinowski, M. Case, 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

D. Harame, B. Jagannathan, A. Rylyakov, 2004, IEEE Transactions on Microwave Theory and Techniques.

Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

D. Harame, Vibhor Jain, Peng Cheng, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs

P. Asbeck, D. Harame, W. T. Chen, 2019, IEEE Electron Device Letters.

A novel borderless contact/interconnect technology using aluminum oxide etch stop for high performance SRAM and logic

D. Harame, J. Malinowski, T. Lii, 1993, Proceedings of IEEE International Electron Devices Meeting.

Advanced passive devices for enhanced integrated RF circuit performance

D. Harame, X. Wang, J. Johnson, 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).

14nm FinFET technology for analog and RF applications

D. Harame, J. Watts, A. Bellaouar, 2017, 2017 Symposium on VLSI Technology.

Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

D. Harame, T. D. England, J. D. Cressler, 2012, 2012 IEEE Radiation Effects Data Workshop.

Noise-gain tradeoff in RF SiGe HBTs

D. Harame, Guofu Niu, Shiming Zhang, 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).