David R. Greenberg

发表

Alvin J. Joseph, Douglas Duane Coolbaugh, D. Harame, 2002 .

An approach to a mathematics of phenomena: canonical aspects of reentrant form eigenbehavior in the extended calculus of indications

David R. Greenberg, Gary C. Berkowitz, Charles A. White, 1988 .

50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+ GHz very large-scale integration mixed-signal ICs

Alvin J. Joseph, Gregory G. Freeman, Seshadri Subbanna, 2002 .

Characterization and model enablement of high-frequency noise in 90-nm CMOS technology

David R. Greenberg, Scott Parker, Zhenrong Jin, 2007, SPIE International Symposium on Fluctuations and Noise.

HIGH-SPEED, LOW-POWER DIGITAL AND ANALOG CIRCUITS IMPLEMENTED IN IBM SiGe BiCMOS TECHNOLOGY

Alvin J. Joseph, David R. Greenberg, Barry K. Gilbert, 2003 .

The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor

David R. Greenberg, D. Greenberg, 1995 .

RFCMOS technology from 0.25/spl mu/m to 65nm: the state of the art

David R. Greenberg, Matthew J. Breitwisch, Basanth Jagannathan, 2004, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571).

Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David R. Greenberg, Bernard S. Meyerson, 2003, IBM J. Res. Dev..

Review of silicon-germanium BICMOS technology after 4 years of production and future directions

David R. Greenberg, D. A. Herman, Basanth Jagannathan, 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

Scaling of SiGe Heterojunction Bipolar Transistors

David R. Greenberg, Jae-Sung Rieh, Gregory Freeman, 2005, Proceedings of the IEEE.

A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistors

David R. Greenberg, Basanth Jagannathan, Jae-Sung Rieh, 2004 .

0.13μm 210GHz f T SiGe HBTs - expanding the horizons of SiGe BiCMOS

Alvin J. Joseph, C. Dickey, David R. Greenberg, 2002 .

Lateral scaling of the self-aligned extrinsic base in SiGe HBTs

David R. Greenberg, David L. Harame, M. Longstreet, 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

David R. Greenberg, Basanth Jagannathan, Andreas D. Stricker, 2004, RFIC 2004.

The revolution in SiGe: Impact on device electronics

Alvin J. Joseph, James S. Dunn, David R. Greenberg, 2004 .