A. N. Titkov

发表

Study of high-power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy

Georgy G. Zegrya, A. V. Ankudinov, V. P. Evtikhiev, 2003, Saratov Fall Meeting.

Origin of recombination transitions at the lattice‐matched GaInAsSb‐GaSb n‐N type‐II heterojunctions

Jiri Oswald, Jiří Pangrác, Eduard Hulicius, 1994 .

Kinetics and Mechanism of Phase Transitions in the Crystals of 2,4,6-Trinitrotoluene and Benzotrifuroxane

A. N. Titkov, L. Atovmyan, A. Titkov, 1994 .

High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region

Achim Trampert, Eric Tournié, Vittorianna Tasco, 2006 .

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

V. P. Evtikhiev, I. S. Tarasov, I. V. Kudryashov, 1998 .

Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction

V. P. Evtikhiev, A. M. Boiko, A. N. Titkov, 1999 .

Analysis of the lateral resolution of electrostatic force gradient microscopy

P. Girard, A. N. Titkov, Erkki Lähderanta, 2012 .

Structural characterization and strain relaxation in porous GaN layers

K. D. Mynbaev, A. N. Titkov, H. Huhtinen, 2000 .

Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

Nikita A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, 2010 .

Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy

A. V. Ankudinov, V. P. Evtikhiev, A. N. Titkov, 2003 .