Lev M. Sambursky

Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI’s Using Universal Rad-SPICE MOSFET Model

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2017, J. Electron. Test..

Complex for automated measurement and processing of BJTs and MOSFETs characteristics for extremal applications

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2016, 2016 International Siberian Conference on Control and Communications (SIBCON).

IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2015 .

Simulation of total dose influence on analog-digital SOI/SOS CMOS circuits with EKV-RAD macromodel

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2013, East-West Design & Test Symposium (EWDTS 2013).

Generalized test automation method for MOSFET's including characteristics measurements and model parameters extraction for aero-space applications

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2017, 2017 IEEE East-West Design & Test Symposium (EWDTS).

TCAD-SPICE simulation of MOSFET switch delay time for different CMOS technologies

D. A. Popov, Konstantin O. Petrosyants, Igor A. Kharitonov, 2011, 2011 9th East-West Design & Test Symposium (EWDTS).

Models of optoelectronic devices for IC simulation with SPICE

Lev M. Sambursky, Konstantin O. Petrosjanc, 2005, Other Conferences.

Prediction of High-Temperature Operation (up to +300°C) of Reference Voltage Source Built with Temperature-Tolerant Production Technology

Lev M. Sambursky, Mamed R. Ismail-Zade, Dmitry A. Parfenov, 2018, 2018 IEEE East-West Design & Test Symposium (EWDTS).

Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2013 .

Fault simulation in radiation-hardened SOI CMOS VLSIs using universal compact MOSFET model

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2016, 2016 17th Latin-American Test Symposium (LATS).

SOI/SOS MOSFET universal compact SPICE model with account for radiation effects

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C)

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2017, Microelectron. Reliab..

Temperature characterization of small-scale SOI MOSFETs in the extended range (to 300°C)

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, 2016, 2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).