A. E. Michel

发表

Determination of the active region in light-emitting GaAs diodes

M. I. Nathan, A. E. Michel, E. J. Walker, 1963 .

High-Energy Emission in GaAs Electroluminescent Diodes

Marshall I. Nathan, A. E. Michel, M. Nathan, 1966 .

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

A. E. Michel, W. Rausch, Paul Ronsheim, 1987 .

Shallow junctions by high‐dose As implants in Si: experiments and modeling

M. Y. Tsai, J. E. E. Baglin, A. E. Michel, 1980 .

GaAs Injection Laser with Novel Mode Control and Switching Properties

John C. Marinace, Marshall I. Nathan, A. E. Michel, 1965 .

Channeling in low energy boron ion implantation

A. E. Michel, S. R. Mader, S. Mader, 1984 .

Transient boron diffusion in ion-implanted crystalline and amorphous silicon

Stephan A. Cohen, Vaughn R. Deline, A. E. Michel, 1988 .

Triangular injection lasers

J. C. Marinace, A. E. Michel, M. I. Nathan, 1964 .

Implantation damage and the anomalous transient diffusion of ion‐implanted boron

A. E. Michel, W. Rausch, Paul Ronsheim, 1987 .