Marko Radosavljevic

High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper)

Han Wui Then, Seung Hoon Sung, Sansaptak Dasgupta, 2019, 2019 Device Research Conference (DRC).

A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors

James Tschanz, Vivek De, Han Wui Then, 2021, 2021 Symposium on VLSI Circuits.

Single-wall carbon nanotube based devices

Jacques Lefebvre, Marko Radosavljevic, M. Radosavljevic, 2000 .

SINGLE-WALL CARBON NANOTUBE CIRCUITS ASSEMBLED WITH AN ATOMIC FORCE MICROSCOPE

Jacques Lefebvre, Marko Radosavljevic, M. Radosavljevic, 1999 .

Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors

Stefan Heinze, Jerry Tersoff, Marko Radosavljevic, 2003 .

Fabrication of nanometer size gaps in a metallic wire

Jacques Lefebvre, Marko Radosavljevic, M. Radosavljevic, 2000 .

Controlled creation of a carbon nanotube diode by a scanned gate

Marcus Freitag, Marko Radosavljevic, M. Radosavljevic, 2001 .