Yu. V. Khabarov

发表

Photoluminescence of 2D electronic δ-layers in lateral non-homogeneous nano-structures based on GaAs

G. B. Galiev, V. V. Kapaev, V. A. Petrov, 2006, International Conference on Micro- and Nano-Electronics.

Structural characterization of interfaces in the AlxGa1−xAs/GaAs/AlxGa1−xAs heterostructures by high-resolution X-ray reflectometry and diffractometry

G. B. Galiev, R. M. Imamov, M. A. Chuev, 2005 .

Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations

G. B. Galiev, R. M. Imamov, Yu. V. Khabarov, 1999 .

Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers

G. B. Galiev, Yu. V. Khabarov, V. Mokerov, 1998 .

A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2 $$\bar 1\bar 1$$ ] direction

G. B. Galiev, Yu. V. Khabarov, V. V. Saraĭkin, 2001 .

Effect of misorientation angle on the photoluminescence spectra of Si (δ)-doped GaAs (111)A layers grown by molecular beam epitaxy

G. B. Galiev, Yu. V. Khabarov, V. Mokerov, 2001 .

Optical and electrical properties of the InAs/GaAs modulation-doped superlattices for InAs-layer thicknesses below and near the quantum-dot-formation threshold

Yu. V. Khabarov, Y. Fedorov, V. Mokerov, 2000 .

Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold

Yu. V. Khabarov, Y. Fedorov, V. Mokerov, 2000 .

Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers

Yu. V. Khabarov, V. Kapaev, V. Petrov, 2006 .

InxGa 1–xAs Strained-Layer Quantum Well in a Pseudomorphic Heterostructure: High-Resolution XRD Characterization for Different Quantum-Well Thicknesses

R. M. Imamov, Yu. V. Khabarov, M. Chuev, 2003 .

Low-temperature photoluminescence and X-ray diffractometry study of InxGa1−xAs quantum wells

R. M. Imamov, M. A. Chuev, Yu. V. Khabarov, 2000 .

Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers: Photoluminescence of tunneling-coupled quantum wells

Yu. V. Khabarov, V. Petrov, V. V. Kapaev, 2004 .