Y. S. Tsai

Self-heating effect in FinFETs and its impact on devices reliability characterization

K. Wu, Y.-H Lee, S. E. Liu, 2014, 2014 IEEE International Reliability Physics Symposium.

The physical explanation of TDDB power law lifetime model through oxygen vacancy trap investigations in HKMG NMOS FinFET devices

S. C. Chen, S. C. Chen, R. Lu, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).