Keizo Kinoshita

发表

High-performance silicon photonics platform for low-power photonic integrated circuits

Tohru Mogami, Tsuyoshi Horikawa, Keizo Kinoshita, 2017, 2017 MIXDES - 24th International Conference "Mixed Design of Integrated Circuits and Systems.

A 3.14 um2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2012, 2012 Symposium on VLSI Circuits (VLSIC).

Demonstration of a Nonvolatile Processor Core Chip with Software-Controlled Three-Terminal MRAM Cells for Standby-Power Critical Applications

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2013 .

Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2013, IEICE Electron. Express.

A 90nm 12ns 32Mb 2T1MTJ MRAM

Yuichi Ito, Hiroaki Honjo, Yosuke Kobayashi, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

Fingertip-Size Optical Module, "Optical I/O Core", and Its Application in FPGA

Hiroshi Yamaguchi, Jun Ushida, Junichi Fujikata, 2019, IEICE Trans. Electron..

Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

Challenges for non-volatile memory & logic manufacturing utilizing magnetic tunnel junction on 300 mm wafer

Keizo Kinoshita, 2011, GLSVLSI '11.

Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2015, IEEE Journal of Solid-State Circuits.

10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device

Hiroaki Honjo, Kunihiko Ishihara, Keizo Kinoshita, 2014, IEEE Transactions on Magnetics.

Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure.

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, Journal of applied physics.

Electrical endurance of Co/Ni wire for magnetic domain wall motion device

Shoji Ikeda, Hiroaki Honjo, Keizo Kinoshita, 2013 .

27.4 A 90nm 12ns 32Mb 2T1MTJ MRAM

Naoki Kasai, S. Miura, Hiroaki Honjo, 2009 .

Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

Hiroaki Honjo, Kunihiko Ishihara, Keizo Kinoshita, 2014 .

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

Shoji Ikeda, Tetsuo Endoh, Hiroaki Honjo, 2015 .

Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions

Shoji Ikeda, Hiroaki Honjo, Keizo Kinoshita, 2012 .